Fabrication and electrical properties of graphene nanoribbons
J Bai, Y Huang - Materials Science and Engineering: R: Reports, 2010 - Elsevier
Graphene is a semimetal with a zero band gap, and therefore cannot be used for effective
field-effect transistors (FETs) at room temperature. Theoretical study predicted an …
field-effect transistors (FETs) at room temperature. Theoretical study predicted an …
Twin-induced InSb nanosails: A convenient high mobility quantum system
Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for
realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum …
realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum …
Quantum Transport in InSb Quantum Well Devices: Progress and Perspective
InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …
effective mass, high electron mobility, large effective g-factor, and strong spin-orbit …
Geometric manipulation of the high-field linear magnetoresistance in InSb epilayers on GaAs (001)
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers
on GaAs (001), studying the modification of the MR when processed into a set of geometries …
on GaAs (001), studying the modification of the MR when processed into a set of geometries …
Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs (111) substrate by molecular beam epitaxy
We report the growth of InSb/CdTe hetero-epitaxial thin films on the GaAs (111) B substrate
using molecular beam epitaxy. The use of (111) orientation enables the fast strain relaxation …
using molecular beam epitaxy. The use of (111) orientation enables the fast strain relaxation …
Effect of explosive thermal evaporation conditions on the phase composition, crystallite orientation, electrical and magnetic properties of heteroepitaxial InSb films on …
In the present work, the explosive thermal evaporation was used to form heteroepitaxial InSb
films on GaAs (100) substrates. The investigation results of phase composition, orientation of …
films on GaAs (100) substrates. The investigation results of phase composition, orientation of …
Detection and susceptibility measurements of a single Dynal bead
In this work we present detection and susceptibility measurement experiments on a single
superparamagnetic Dynal bead with a diameter of 1 μm and a magnetic moment of≈ 4× 10 …
superparamagnetic Dynal bead with a diameter of 1 μm and a magnetic moment of≈ 4× 10 …
Fabrication and characterization of n-InSb thin film of different thicknesses
SR Vishwakarma, A Kumar, RSN Tripathi, S Das - 2013 - nopr.niscpr.res.in
The n-type indium antimonide thin films of the thickness 300-1200 nm were fabricated by
electron beam evaporation technique on ultrasonically cleaned glass substrates at room …
electron beam evaporation technique on ultrasonically cleaned glass substrates at room …
Detection of a micron-sized magnetic particle using InSb Hall sensor
We present our results on the realization of ultra-sensitive and non-invasive magnetic
sensors based on double-cross InSb Hall bars with dimensions down to 1.5 mum. Hall …
sensors based on double-cross InSb Hall bars with dimensions down to 1.5 mum. Hall …
Ultrasmall particle detection using a submicron Hall sensor
We demonstrate detection of a single FePt nanoparticle (diameter 150 nm, moment∼ 10 7 μ
B) using an ultrasensitive InSb Hall sensor with the bar lateral width of 600 nm. The white …
B) using an ultrasensitive InSb Hall sensor with the bar lateral width of 600 nm. The white …