The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …

Transparent electronic devices formed on flexible substrates are expected to meet emerging
technological demands where silicon-based electronics cannot provide a solution …

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1983 Suntola et al. 4,993,358 A 2f1991 Mahawili 5,055.319 A 10, 1991 Bunshah et al …

US PATENT DOCUMENTS 6,642,573 B1 11/2003 Halliyal et al. 6,645,882 B1 11/2003
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …

Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …

3,357,961 A 12/1967 Makowski et al. 3,381,114. A 4, 1968 Nakanuma 4,058.430 A 11, 1977
Suntola et al. 4,215,156 A 7, 1980 Dalal et al. 4,302.620 A 11, 1981 Chu 4.333, 808 A …

An overview of our recent work on ultrathin (< 100 Å) films of metal oxides deposited on
silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al2O3 …

In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen
binding metal ion (“oxygen getter”), X, functions to control O vacancies and enhance lattice …

As a first step in the identification of suitable alternative gate dielectrics for metal oxide
semiconductor field-effect transistors (MOSFETs), we have used tabulated thermodynamic …