The marriage between a 2D layered material (2DLM) and a complex transition metal oxide
(TMO) results in a variety of physical and chemical phenomena that cannot be achieved in …

Quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is
studied to understand the role of oxygen vacancies in determining the dielectric properties of …

Graphene is emerging as a promising material for future electronics and optoelectronics
applications due to its unique electronic structure. Understanding the graphene-dielectric …

High-k dielectric oxides are supposedly ideal gate-materials for ultra-high do** in
graphene and other 2D-crystals. Here, we report a temperature-dependent electronic …

The electrical transport properties of graphene are greatly influenced by its environment.
Owing to its high dielectric constant, strontium titanate (STO) is expected to suppress the …

The electron band structure of graphene on SrTiO3 substrate has been investigated as a
function of temperature. The high-resolution angle-resolved photoemission study reveals …

Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to
promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of …

The theoretically predicted intrinsic spin relaxation time of up to 1 μ s in graphene along with
extremely high mobilities makes it a promising material in spintronics. Numerous …

Graphene, grown by chemical vapor deposition, is transferred onto Nb-doped SrTiO3 (001)
surface and the interface properties are characterized by scanning tunneling microscopy …

The entire graphene field-effect-transistor devices first fabricated on SiO 2/Si are peeled
from the surface and placed on a different wafer. Both longitudinal and transverse resistivity …