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Self-Assembled TaOX/2H-TaS2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga2O3 Transistor
Two-dimensional (2D)-layered material tantalum disulfide (2H-TaS2) is known to be a van
der Waals conductor at room temperature. Here, 2D-layered TaS2 has been partially …
der Waals conductor at room temperature. Here, 2D-layered TaS2 has been partially …
[HTML][HTML] Polymer matrix composite engineering for PDMS based capacitive sensors to achieve high-performance and broad-range pressure sensing
Abstract Internet of Things (IoT) is increasingly set to be used and implemented in every
sphere of technology where low-cost sensors, whose sensing needs are not so rigorous, are …
sphere of technology where low-cost sensors, whose sensing needs are not so rigorous, are …
Atomic-layer-deposited SiO2/TiO2/SiO2 sandwiched dielectrics for metal–insulator–metal capacitor application
QX Zhang, B Zhu, LF Zhang, SJ Ding - Microelectronic engineering, 2014 - Elsevier
A new concept of SiO 2/TiO 2/SiO 2 (STS) sandwiched dielectrics has been successfully
prepared by atomic-layer-deposition technique for high density MIM capacitor applications …
prepared by atomic-layer-deposition technique for high density MIM capacitor applications …
The application of Lau's Schottky-Poole-Frenkel theory to distinguish leakage current mechanisms in high-k MIM capacitors by pattern recognition
WS Lau - 2022 China Semiconductor Technology International …, 2022 - ieeexplore.ieee.org
Lau's unified Schottky-Poole-Frenkel theory, first proposed in 2012, can be applied to
distinguish leakage current mechanisms in high-k MIM capacitors much more effectively …
distinguish leakage current mechanisms in high-k MIM capacitors much more effectively …
The Effects of Annealing on the Electrical Performance of MIM Capacitors with ZrO2 Dielectric
Q Zhang - Integrated Ferroelectrics, 2019 - Taylor & Francis
This article studied the performances of 10 nm and 20 nm ZrO2 dielectric metal–insulator–
metal (MIM) capacitors before and after rapid thermal annealing (RTA). The annealing …
metal (MIM) capacitors before and after rapid thermal annealing (RTA). The annealing …
Superior bipolar resistive switching behaviors of solution-processed HfAlOx thin film for nonvolatile memory applications
KH Jang, JH Park, SM Oh, I Hwang… - Japanese Journal of …, 2014 - iopscience.iop.org
We report on the bipolar resistive switching behavior and uniform cumulative distribution of
set/reset voltage observed from the resistive random access memory (ReRAM) device …
set/reset voltage observed from the resistive random access memory (ReRAM) device …
Structural and electrical properties of radio frequency sputtered HfTaOx films for high-k gate insulator
Mixed HfTaO x dielectric has been deposited by radio frequency (RF) magnetron co-
sputtering of HfO 2 and Ta 2 O 5 targets on Si substrates and with Pt bottom electrode for …
sputtering of HfO 2 and Ta 2 O 5 targets on Si substrates and with Pt bottom electrode for …
Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability
C Gu - 2015 - dr.ntu.edu.sg
High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device
reliability. In this work, we conducted first-principles modeling and simulation to investigate …
reliability. In this work, we conducted first-principles modeling and simulation to investigate …
Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures
WS Lau, OY Wong, H Wong - 2013 IEEE International …, 2013 - ieeexplore.ieee.org
It has been difficult to distinguish whether the leakage current mechanism is Schottky
emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two …
emission or Poole-Frenkel effect for high-k capacitors. We would like to point out that the two …