[HTML][HTML] Reliability of analog resistive switching memory for neuromorphic computing
As artificial intelligence calls for novel energy-efficient hardware, neuromorphic computing
systems based on analog resistive switching memory (RSM) devices have drawn great …
systems based on analog resistive switching memory (RSM) devices have drawn great …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
In this Letter, we present reset-voltage-dependent precise tuning operation of TiO x/Al 2 O 3-
based memristive devices. For the high resistance state (HRS) with high reset voltage …
based memristive devices. For the high resistance state (HRS) with high reset voltage …
RADAR: A fast and energy-efficient programming technique for multiple bits-per-cell RRAM arrays
HfO 2-based resistive RAM (RRAM) is an emerging nonvolatile memory technology that has
recently been shown capable of storing multiple bits-per-cell. The energy/delay costs of an …
recently been shown capable of storing multiple bits-per-cell. The energy/delay costs of an …
Spiking neural networks for inference and learning: A memristor-based design perspective
On metrics of density and power efficiency, neuromorphic technologies have the potential to
surpass mainstream computing technologies in tasks where real-time functionality …
surpass mainstream computing technologies in tasks where real-time functionality …
Toward reliable multi-level operation in RRAM arrays: Improving post-algorithm stability and assessing endurance/data retention
Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays
is currently a challenging task due to several threats like the post-algorithm instability …
is currently a challenging task due to several threats like the post-algorithm instability …
Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions
Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-
volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling …
volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling …
Array-level programming of 3-bit per cell resistive memory and its application for deep neural network inference
The requirement of multilevel cell (MLC) resistive random access memory (RRAM) for
computing is different than that for MLC storage. It generally requires a linearly spaced …
computing is different than that for MLC storage. It generally requires a linearly spaced …
Field-enhanced route to generating anti-Frenkel pairs in
The generation of anti-Frenkel pairs (oxygen vacancies and oxygen interstitials) in
monoclinic and cubic HfO 2 under an applied electric field is examined. A thermodynamic …
monoclinic and cubic HfO 2 under an applied electric field is examined. A thermodynamic …
One transistor–two memristor based on amorphous indium–gallium–zinc-oxide for neuromorphic synaptic devices
JT Jang, D Kim, WS Choi, SJ Choi… - ACS Applied …, 2020 - ACS Publications
Various memristor-based synaptic devices have been proposed for implementing a
neuromorphic system. However, memristor devices typically suffer from various inherent …
neuromorphic system. However, memristor devices typically suffer from various inherent …