Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

We report the results of a comparative investigation of graphene films prepared on Si (100)
and fused silica (SiO2) combining pulsed laser deposition and rapid thermal annealing …

Raman scattering is a powerful non-contact and non-destructive characterization tool for SiC
polytypes for both the lattice and electronic properties. Here, I will briefly review two recent …

Pristine, few-layer graphene (FLG)/Si nanopillar assemblies are introduced as gas sensitive
chemiresistors showing unprecedented sensitivity towards NO 2 when operated at room …

A novel salicide technology to improve the thermal stability of the conventional Ni silicide
has been developed by employing Ni (Pt) alloy salicidation. This technique provides an …

Ni/SiC interface reaction was investigated by Raman scattering. The specimen consisted of
a 200 nm Ni layer deposited on a both-side polished 6H–SiC wafer with postannealing at …

The formation of ultrathin silicide films of Ni 1− x Pt x at 450–850 C is reported. Without Pt (x=
0) and for t Ni< 4 nm⁠, epitaxially aligned NiSi 2− y films readily grow and exhibit …

This study investigated the influence of UV picosecond laser fluence, used to ablate the SiN
x antireflection coating for Ni/Cu/Ag plated p-type Si solar cells, on busbar and finger …

The interfacial reactions and chemical phase formation between nickel and ultrahigh
vacuum chemical vapor deposited Si 0.75 Ge 0.25 alloy have been studied within the …

This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal
processing of nickel thin films deposited on silicon substrates. The in situ techniques …