Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted
increasing interest since 2011. They have various advantages such as Si-based …

The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …

Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …

Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Atomic layer deposition is widely acknowledged as a powerful technique for the deposition
of high quality layers for several applications including photovoltaics (PV). The capability of …

HfO2 thin films, extensively studied as high-k gate dielectric layers in metal-oxide-
semiconductor field effect transistors, have attracted interest of late due to their newly …

This introductory chapter provides a brief survey on the development of epitaxial growth
techniques and points out tasks for the epitaxy of device structures. Starting from early …

From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …