Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

We show that a quantitative description of the conduction band in Ga (In) NAs is obtained by
combining the experimentally motivated band anticrossing model with detailed calculations …

The electron effective mass, me, has been determined by magnetophotoluminescence in as-
grown and hydrogenated Ga As 1− x N x samples for a wide range of nitrogen …

We derive an analytical model to describe the conduction-band states of GaNAs-based
quantum well structures, including the band anticrossing effect between N resonant states …

We investigate the electronic properties of Ga As 1− x Bi x by photoluminescence at variable
temperature (T= 10–430 K) and high magnetic field (B= 0–30 T)⁠. In Ga As 0.981 Bi 0.019⁠ …

We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga
1-x In x N y As 1-y multiple quantum well structures in magnetic fields up to 50 T as a …

The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the
potential applications of semiconductor nanowires (NWs). This is particularly true in …

The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1‐
xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable …

Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically
the electronic and structural properties of the crystal through the creation of nitrogen …

We report the observation of thermal annealing-and nitrogen-induced effects on electronic
transport properties of as-grown and annealed n-and p-type modulation-doped Ga 1-x In x N …