Material platforms for defect qubits and single-photon emitters

G Zhang, Y Cheng, JP Chou, A Gali - Applied Physics Reviews, 2020‏ - pubs.aip.org
Quantum technology has grown out of quantum information theory and now provides a
valuable tool that researchers from numerous fields can add to their toolbox of research …

Silicon carbide color centers for quantum applications

S Castelletto, A Boretti - Journal of Physics: Photonics, 2020‏ - iopscience.iop.org
Silicon carbide has recently surged as an alternative material for scalable and integrated
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …

Ab initio theory of the nitrogen-vacancy center in diamond

Á Gali - Nanophotonics, 2019‏ - degruyter.com
The nitrogen-vacancy (NV) center in diamond is a solid-state defect qubit with favorable
coherence time up to room temperature, which could be harnessed in several quantum …

Silicon carbide for integrated photonics

A Yi, C Wang, L Zhou, Y Zhu, S Zhang, T You… - Applied Physics …, 2022‏ - pubs.aip.org
Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide
a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a …

Excited state properties of point defects in semiconductors and insulators investigated with time-dependent density functional theory

Y **, VW Yu, M Govoni, AC Xu… - Journal of Chemical …, 2023‏ - ACS Publications
We present a formulation of spin-conserving and spin-flip hybrid time-dependent density
functional theory (TDDFT), including the calculation of analytical forces, which allows for …

Photoluminescence spectra of point defects in semiconductors: Validation of first-principles calculations

Y **, M Govoni, G Wolfowicz, SE Sullivan… - Physical Review …, 2021‏ - APS
Optically and magnetically active point defects in semiconductors are interesting platforms
for the development of solid state quantum technologies. Their optical properties are usually …

First principles calculation of spin-related quantities for point defect qubit research

V Ivády, IA Abrikosov, A Gali - npj Computational Materials, 2018‏ - nature.com
Point defect research in semiconductors has gained remarkable new momentum due to the
identification of special point defects that can implement qubits and single photon emitters …

The case for a defect genome initiative

Q Yan, S Kar, S Chowdhury, A Bansil - Advanced Materials, 2024‏ - Wiley Online Library
Abstract The Materials Genome Initiative (MGI) has streamlined the materials discovery effort
by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as …

[HTML][HTML] The application of the SCAN density functional to color centers in diamond

M Maciaszek, V Žalandauskas, R Silkinis… - The Journal of …, 2023‏ - pubs.aip.org
Detailed characterization of deep-level color centers requires understanding their electronic
and atomic structure, which is most commonly investigated utilizing the Kohn–Sham density …

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

T Kobayashi, K Harada, Y Kumagai, F Oba… - Journal of Applied …, 2019‏ - pubs.aip.org
We report first-principles calculations that clarify the formation energies and charge
transition levels of native point defects and carbon clusters in the 4H polytype of silicon …