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Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices
W Zhao, H Wang, H Shen, Z Hu, MH Chi - US Patent 9,653,583, 2017 - Google Patents
One illustrative method disclosed herein includes, among other things, forming a first gate
structure above a fin, forming episemiconductor material on the fin, performing at least one …
structure above a fin, forming episemiconductor material on the fin, performing at least one …
Three-dimensional device and method of forming the same
(57) ABSTRACT A semiconductor device includes a plurality of first sources/drains and a
plurality of first source/drain (S/D) contacts formed over the first sources/drains. The device …
plurality of first source/drain (S/D) contacts formed over the first sources/drains. The device …
Method and device for incorporating single diffusion break into nanochannel structures of FET devices
J Smith, A Devilliers - US Patent 10,734,224, 2020 - Google Patents
(57) ABSTRACT A method of forming a semiconductor device includes providing a starting
structure including a substrate having thereon a plurality of gate regions alternately …
structure including a substrate having thereon a plurality of gate regions alternately …
Semiconductor device and method for fabricating the same
SK Min, SK Kang, KM Ryu, GG Park - US Patent 10,128,240, 2018 - Google Patents
(57) ABSTRACT A semiconductor device includes a substrate including first to third regions,
wherein the third region is positioned in a first direction between the first and second …
wherein the third region is positioned in a first direction between the first and second …
Fin cut enabling single diffusion breaks
H Jagannathan, SK Kanakasabapathy… - US Patent …, 2017 - Google Patents
BACKGROUND The present disclosure relates to the electrical, electronic, and computer
arts, and, more particularly, to methods for cutting fins in the fabrication of integrated circuits …
arts, and, more particularly, to methods for cutting fins in the fabrication of integrated circuits …
Semiconductor device and method for fabricating the same
YW Tung, JY Wang, CT Huang… - US Patent App. 15 …, 2019 - Google Patents
US20190006360A1 - Semiconductor device and method for fabricating the same - Google
Patents US20190006360A1 - Semiconductor device and method for fabricating the same …
Patents US20190006360A1 - Semiconductor device and method for fabricating the same …
Semiconductor devices
JY Kim - US Patent 10,431,673, 2019 - Google Patents
ABSTRACT A semiconductor device includes a fin protruding from a substrate and
extending in a first direction, source/drain regions on the fin, a recess between the …
extending in a first direction, source/drain regions on the fin, a recess between the …
Semiconductor device and method for fabricating the same
IM Tseng, WA Liang, CM Huang - US Patent 9,824,931, 2017 - Google Patents
BACKGROUND OF THE INVENTION DETAILED DESCRIPTION 1. Field of the Invention
Referring to FIGS. 1-10, FIGS. 1-10 illustrate a method for fabricating semiconductor device …
Referring to FIGS. 1-10, FIGS. 1-10 illustrate a method for fabricating semiconductor device …
Semiconductor devices including a device isolation region in a substrate and/or fin
DY Kwak, KB Park, KH Yeo, SJ Lee, KY Jeon… - US Patent …, 2020 - Google Patents
Semiconductor devices are provided. A semiconductor device includes a semiconductor
substrate. The semiconduc tor device includes first and second source/drain regions in the …
substrate. The semiconduc tor device includes first and second source/drain regions in the …
Diffusion break forming after source/drain forming and related IC structure
GR Mulfinger, JZ Wallner - US Patent 9,917,103, 2018 - Google Patents
Methods of forming a diffusion break are disclosed. The method includes forming a diffusion
break after source/drain formation, by removing a gate stack of the dummy gate to a buried …
break after source/drain formation, by removing a gate stack of the dummy gate to a buried …