Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …

The importance of stress and strain effects on surface physics are reviewed. For this purpose
the following points are developed.(1) The elastic, thermodynamics and atomistic definitions …

Throughout its previous four editions, Combustion has made a very complex subject both
enjoyable and understandable to its student readers and a pleasure for instructors to teach …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

This paper summarizes our present knowledge of the defect-free nucleation of III/V
semiconductors on exactly oriented Si (001) surfaces. A defect-free III/V nucleation layer on …

Experimental results on the epitaxy of Si and Ge on Si (001) and Si (111) surfaces, which
are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed …

The purpose of this article is to provide an overview of the surface structures of the clean
surfaces of tetrahedrally coordinated semiconductors within the context of identifying the …

The possibility induction of light emission from silicon, an indirect bandgap material in which
radiative transitions are unlikely, raises several interesting and technologically important …

The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …

This review outlines developments in the growth of crystalline oxides on the ubiquitous
silicon semiconductor platform. The overall goal of this endeavor is the integration of …