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Investigation of DC and Low-Frequency Noise performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K to 420 K
This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of
GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K …
GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K …
[PDF][PDF] Review of GaN/ZnO hybrid structures based materials and devices
AM Nahhas - Am. J. Nano Res. Appl., 2018 - researchgate.net
This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide
(ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial …
(ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial …
Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states
J Ghosh, S Ganguly - Japanese Journal of Applied Physics, 2018 - iopscience.iop.org
An analytical modeling framework is presented for the two-dimensional electron gas (2DEG)
density and bare surface barrier height in AlGaN/InGaN/GaN double heterostructures, which …
density and bare surface barrier height in AlGaN/InGaN/GaN double heterostructures, which …
Characterization of GaN-based HEMTs down to 4.2 K for cryogenic applications
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is
systematically investigated by the direct current (DC) and low-frequency noise (LFN) …
systematically investigated by the direct current (DC) and low-frequency noise (LFN) …
Simulation and mechanism analysis of MOSFET threshold voltage drift induced by manufacturing process
W Gao, P Yin, Z Li, M Ren, J Zhang… - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
Three problems of threshold voltage (Vth) drift of Trench-MOSFET induced by manufacturing
process are discussed. From the simulation results, it can be found that the N+ source …
process are discussed. From the simulation results, it can be found that the N+ source …
Acetone Adsorption Characteristics of Pd/AlGaN/GaN Heterostructure Grown by PAMBE: A Kinetic Interpretation at Low Temperature
An AlGaN/GaN heterostructure based metal-semiconductor-metal symmetrically bi-
directional Schottky diode sensor structure has been employed to investigate the kinetics of …
directional Schottky diode sensor structure has been employed to investigate the kinetics of …
Reliability assessment in SiC and GaN power MOSFETs based emerging Wide Bandgap semiconductors technology from a systematic literature review
EA Guevara-Cabezas… - Dominio de las …, 2022 - dominiodelasciencias.com
Silicon power devices have improved over the last decades, but they are approaching their
per-formance limits imposed by material properties. However, emerging materials such as …
per-formance limits imposed by material properties. However, emerging materials such as …