Semiconductor spin qubits

G Burkard, TD Ladd, A Pan, JM Nichol, JR Petta - Reviews of Modern Physics, 2023 - APS
The spin degree of freedom of an electron or a nucleus is one of the most basic properties of
nature and functions as an excellent qubit, as it provides a natural two-level system that is …

Noisy intermediate-scale quantum computers

B Cheng, XH Deng, X Gu, Y He, G Hu, P Huang, J Li… - Frontiers of …, 2023 - Springer
Quantum computers have made extraordinary progress over the past decade, and
significant milestones have been achieved along the path of pursuing universal fault-tolerant …

Engineering topological states in atom-based semiconductor quantum dots

M Kiczynski, SK Gorman, H Geng, MB Donnelly… - Nature, 2022 - nature.com
The realization of controllable fermionic quantum systems via quantum simulation is
instrumental for exploring many of the most intriguing effects in condensed-matter physics …

High-fidelity initialization and control of electron and nuclear spins in a four-qubit register

J Reiner, Y Chung, SH Misha, C Lehner… - Nature …, 2024 - nature.com
Single electron spins bound to multi-phosphorus nuclear spin registers in silicon have
demonstrated fast (0.8 ns) two-qubit SWAP gates and long spin relaxation times (~ 30 s). In …

Machine Learning-Assisted Precision Manufacturing of Atom Qubits in Silicon

AD Tranter, L Kranz, S Sutherland, JG Keizer… - ACS …, 2024 - ACS Publications
Donor-based qubits in silicon, manufactured using scanning tunneling microscope (STM)
lithography, provide a promising route to realizing full-scale quantum computing …

Benchmarking noise and dephasing in emerging electrical materials for quantum technologies

S Islam, S Shamim, A Ghosh - Advanced Materials, 2023 - Wiley Online Library
As quantum technologies develop, a specific class of electrically conducting materials is
rapidly gaining interest because they not only form the core quantum‐enabled elements in …

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Z Wang, A Sarkar, SD Liles, A Saraiva, AS Dzurak… - Physical Review B, 2024 - APS
Silicon hole quantum dots have been the subject of considerable attention thanks to their
strong spin-orbit coupling enabling electrical control, a feature that has been demonstrated …

Hyperfine-mediated spin relaxation in donor-atom qubits in silicon

YL Hsueh, L Kranz, D Keith, S Monir, Y Chung… - Physical Review …, 2023 - APS
Donor electron spin qubits hosted within nanoscale devices have demonstrated seconds-
long relaxation times at magnetic fields suitable for the operation of spin qubits in silicon of …

Characterization of low sodium type II silicon clathrate film spin dynamics

JP Briggs, Y Liu, PC Taylor, M Singh, RT Collins… - Applied Physics …, 2024 - pubs.aip.org
Type II Si clathrate is a Si-based, crystalline alternative to diamond silicon with interesting
optoelectronic properties. Here, a pulsed electron paramagnetic resonance study of the spin …

Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates

MT Jones, MS Monir, FN Krauth, P Macha, YL Hsueh… - ACS …, 2023 - ACS Publications
Universal quantum computing requires fast single-and two-qubit gates with individual qubit
addressability to minimize decoherence errors during processor operation. Electron spin …