DC microgrids have attracted significant attention over the last decade in both academia and
industry. DC microgrids have demonstrated superiority over AC microgrids with respect to …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

Wide bandgap semiconductors show superior material properties enabling potential power
device operation at higher temperatures, voltages, and switching speeds than current Si …

Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

This paper presents an isolated on-board vehicular battery charger that utilizes silicon
carbide (SiC) power devices to achieve high density and high efficiency for application in …

Due to wider band gap of silicon carbide (SiC) compared to silicon (Si), MOSFET made in
SiC has considerably lower drift region resistance, which is a significant resistive component …

The current state of wide bandgap device technology is reviewed and its impact on power
electronic system miniaturization for a wide variety of voltage levels is described. A synopsis …

High temperature power electronics has become possible with the recent availability of
silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate …

With increased need for high power density, high efficiency and high temperature
capabilities in aerospace and automotive applications, integrated motor drives (IMD) offers a …