Wannier-function software ecosystem for materials simulations
Over the past two decades, following the early developments on maximally localized
Wannier functions, an ecosystem of electronic-structure simulation techniques and software …
Wannier functions, an ecosystem of electronic-structure simulation techniques and software …
Kwant: a software package for quantum transport
Kwant is a Python package for numerical quantum transport calculations. It aims to be a user-
friendly, universal, and high-performance toolbox for the simulation of physical systems of …
friendly, universal, and high-performance toolbox for the simulation of physical systems of …
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials
H Ilatikhameneh, Y Tan, B Novakovic… - IEEE Journal on …, 2015 - ieeexplore.ieee.org
The performance of tunnel field-effect transistors (TFETs) based on 2-D transition metal
dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations …
dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations …
CMOS compatibility of semiconductor spin qubits
Several domains of society will be disrupted once millions of high-quality qubits can be
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …
Complementary black phosphorus tunneling field-effect transistors
Band-to-band tunneling field-effect transistors (TFETs) have emerged as promising
candidates for low-power integration circuits beyond conventional metal-oxide …
candidates for low-power integration circuits beyond conventional metal-oxide …
Few-layer phosphorene: An ideal 2D material for tunnel transistors
Abstract 2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently
for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent …
for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent …
Dielectric engineered tunnel field-effect transistor
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …
steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics …
Saving Moore's law down to 1 nm channels with anisotropic effective mass
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last
four decades. However, scaling channel lengths beyond 10 nm has become exceptionally …
four decades. However, scaling channel lengths beyond 10 nm has become exceptionally …
Polarization-engineered III-nitride heterojunction tunnel field-effect transistors
The concept and simulated device characteristics of tunneling field-effect transistors (TFETs)
based on III-nitride heterojunctions are presented for the first time. Through polarization …
based on III-nitride heterojunctions are presented for the first time. Through polarization …
Optimum high-k oxide for the best performance of ultra-scaled double-gate MOSFETs
M Salmani-Jelodar, H Ilatikhameneh… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
A widely used technique to mitigate gate leakage in ultrascaled metal oxide semiconductor
field effect transistors (mosfets) is the use of high-k dielectrics, which provide the same …
field effect transistors (mosfets) is the use of high-k dielectrics, which provide the same …