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Discovery-based design of transparent conducting oxide films
The properties of TCO materials derive from the nature, number, and atomic arrangements
of metal cations in crystalline or amorphous oxide structures, from the resident morphology …
of metal cations in crystalline or amorphous oxide structures, from the resident morphology …
Barrier design to prevent metal-induced degradation and improve thermal stability in perovskite solar cells
Metal-contact-induced degradation and escape of volatile species from perovskite solar
cells necessitate excellent diffusion barrier layers. We show that metal-induced degradation …
cells necessitate excellent diffusion barrier layers. We show that metal-induced degradation …
Transparent thin-film transistors with zinc indium oxide channel layer
NL Dehuff, ES Kettenring, D Hong, HQ Chiang… - Journal of Applied …, 2005 - pubs.aip.org
High mobility, n-type transparent thin-film transistors (TTFTs) with a zinc indium oxide (ZIO)
channel layer are reported. Such devices are highly transparent with∼ 85% optical …
channel layer are reported. Such devices are highly transparent with∼ 85% optical …
Highly enhanced light extraction from surface plasmonic loss minimized organic light-emitting diodes.
Extremely high light out-coupling efficiency from a transparent organic light-emitting diode
integrated with microstructures on both sides of the device is reported. The metal free device …
integrated with microstructures on both sides of the device is reported. The metal free device …
Optical properties of ZnO and ZnO: In nanorods assembled by sol-gel method
YW Chen, YC Liu, SX Lu, CS Xu, CL Shao… - The Journal of …, 2005 - pubs.aip.org
Self-assembled zinc oxide (ZnO) and indium-do** zinc oxide (ZnO: In) nanorod thin films
were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel …
were synthesized on quartz substrates without catalyst in aqueous solution by sol-gel …
High-mobility amorphous In2O3–10wt% ZnO thin film transistors
The authors report on the fabrication and characterization of thin film transistors that use
sputter deposited amorphous indium zinc oxide both for the channel and source-drain …
sputter deposited amorphous indium zinc oxide both for the channel and source-drain …
Four‐Terminal Perovskite–CdSeTe Tandem Solar Cells: From 25% toward 30% Power Conversion Efficiency and Beyond
Thin‐film tandem photovoltaic (PV) technology has emerged as a promising avenue to
enhance power conversion efficiency beyond the radiative efficiency limit of single‐junction …
enhance power conversion efficiency beyond the radiative efficiency limit of single‐junction …
The remarkable thermal stability of amorphous In‐Zn‐O transparent conductors
Transparent conducting oxides (TCOs) are increasingly critical components in photovoltaic
cells, low‐e windows, flat panel displays, electrochromic devices, and flexible electronics …
cells, low‐e windows, flat panel displays, electrochromic devices, and flexible electronics …
Rapid thermal annealing of ITO films
Tin-doped indium oxide (ITO) films with 200 nm thickness were deposited on glass
substrates by DC magnetron sputtering at room temperature. And they were annealed by …
substrates by DC magnetron sputtering at room temperature. And they were annealed by …
Si-incorporated amorphous indium oxide thin-film transistors
Amorphous oxide semiconductors, especially indium oxide-based (InO x) thin films, have
been major candidates for high mobility with easy-to-use device processability. As for a …
been major candidates for high mobility with easy-to-use device processability. As for a …