Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …

Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …

Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …

HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …