In this paper, we review the past and recent works on generating intense terahertz (THz)
pulses from photoconductive antennas (PCAs). We will focus on two types of large-aperture …

The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …

Owing to its high melting temperature, the 4H-SiC substrate exhibits numerous defects that
are difficult to remove, hindering the development of large-scale, high electrical conductivity …

Semi-insulating silicon carbide and gallium nitride are attractive materials for compact high-
voltage photoconductive semiconductor switches (PCSSs) due to their large bandgap, high …

Several generations of high power, lateral, linear mode, intrinsically triggered 4H-SiC
photoconductive semiconductor switch designs and their performance are presented. These …

We report on optical waveguides produced by a femtosecond laser in 6H–SiC crystals. Their
guiding properties have been investigated at a wavelength of 1064 nm, and confocal micro …

A new vertical geometry photoconductive switch device based on vanadium compensated
4H Silicon Carbide (4H-SiC) is presented with the structure of aluminum doped ZnO (AZO) …

For the application of third-generation compound semiconductors based on high-voltage,
high-power, and high-frequency devices, particularly in photoconductive semiconductor …

This monograph offers a comprehensive overview of diverse quantization phenomena in
layered materials, covering current mainstream experimental and theoretical research …

High purity semi-insulating (HPSI) 4H-silicon carbide (SiC) was used to fabricate lateral and
vertical photoconductive semiconductor switches (PCSSs). The lateral PCSSs were …