Antiferromagnetism: An efficient and controllable spin source

H Bai, YC Zhang, L Han, YJ Zhou, F Pan… - Applied Physics …, 2022 - pubs.aip.org
Antiferromagnetic (AFM) spintronics is an emerging field, with significant advances in
particular in the study of the tunable spin generation, transport, manipulation, and detection …

Spintronic physical unclonable functions based on field‐free spin–orbit‐torque switching

S Lee, J Kang, JM Kim, N Kim, D Han, T Lee… - Advanced …, 2022 - Wiley Online Library
Physical unclonable function (PUFs) utilize inherent random physical variations of solid‐
state devices and are a core ingredient of hardware security primitives. PUFs promise more …

Field-free magnetization switching in a ferromagnetic single layer through multiple inversion asymmetry engineering

Q Huang, C Guan, Y Fan, X Zhao, X Han, Y Dong… - Acs Nano, 2022 - ACS Publications
A simple, reliable, and self-switchable spin–orbit torque (SOT)-induced magnetization
switching in a ferromagnetic single layer is needed for the development of next generation …

Deterministic switching of perpendicular magnetization by out-of-plane anti-dam** magnon torques

F Wang, G Shi, D Yang, HR Tan, C Zhang, J Lei… - Nature …, 2024 - nature.com
Spin-wave excitations of magnetic moments (or magnons) can transport spin angular
momentum in insulating magnetic materials. This property distinguishes magnonic devices …

Growth-dependent interlayer chiral exchange and field-free switching

YH Huang, CC Huang, WB Liao, TY Chen, CF Pai - Physical Review Applied, 2022 - APS
The interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal
metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions …

Efficient Generation of Out‐of‐Plane Polarized Spin Current in Polycrystalline Heavy Metal Devices with Broken Electric Symmetries

Q Liu, X Lin, A Shaked, Z Nie, G Yu… - Advanced Materials, 2024 - Wiley Online Library
Spin currents of perpendicularly polarized spins (z spins) have received blooming interest
for the potential in energy‐efficient spin–orbit torque switching of perpendicular …

Current-induced magnetization switching in light-metal-oxide/ferromagnetic-metal bilayers via orbital Rashba effect

QK Huang, S Liu, T Yang, R **e, L Cai, Q Cao… - Nano Letters, 2023 - ACS Publications
The orbital angular momentum (OAM) generation as well as its associated orbital torque is
currently a matter of great interest in spin–orbitronics and is receiving increasing attention. In …

Manipulation of perpendicular magnetization via magnon current with tilted polarization

D Zheng, Y Li, C Liu, J Lan, C **, Q Wang, L Zhang… - Matter, 2024 - cell.com
Field-free switching of perpendicular magnetization driven by magnons is a promising
technology that can significantly reduce energy dissipation and potential damage to …

Spin-transfer torque magnetoresistive random access memory technology status and future directions

DC Worledge, G Hu - Nature Reviews Electrical Engineering, 2024 - nature.com
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile
memory technology with a unique combination of speed, endurance, density and ease of …

Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal

Y Zhang, H Xu, K Jia, G Lan, Z Huang, B He, C He… - Science …, 2023 - science.org
Spin-orbit torque (SOT) is a promising strategy to deterministically switch the perpendicular
magnetization, but usually requires an in-plane magnetic field for breaking the mirror …