▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for
silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm …

Semiconductor quantum dot lasers have been extensively studied for applications in future
lightwave telecommunications systems. This paper summarizes a tutorial that was presented …

Research into self-assembled semiconductor quantum dots (QDs) has helped advance
numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By …

A detailed study of the design issues relevant to long-wavelength monolithic mode-locked
lasers is presented. Following a detailed review of the field, we have devised a validated …

Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …

Based on extensive numerical calculations, quantum-dot (QD) amplifiers are predicted to
offer higher output power and lower noise figure compared to bulk as well as quantum well …

The modulation bandwidth of conventional 1.0–1.3 µm self-organized In (Ga) As quantum
dot (QD) lasers is limited to∼ 6–8 GHz due to hot carrier effects arising from the …

This paper provides a review of the recent developments of self-organized In (Ga) As/Ga (Al)
As quantum dot lasers grown directly on Si, as well as their on-chip integration with Si …

Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active
region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk …