The creation of soft errors due to the propagation of single event transients (SETs) is a
significant reliability challenge in modern CMOS logic. SET concerns continue to be …

This paper reviews the status of research in modeling and simulation of single-event effects
(SEE) in digital devices and integrated circuits, with a special emphasis on the current …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

The production and propagation of single-event transients in scaled metal oxide
semiconductor (CMOS) digital logic circuits are examined. Scaling trends to the 100-nm …

The distributions of SET pulse-widths produced by heavy ions in 130-nm and 90-nm CMOS
technologies are measured experimentally using an autonomous pulse characterization …

Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …

Single event upsets (SEU) and single event transients (SET) are major reliability concerns in
deep submicron technologies. As technology feature size shrinks, digital circuits are …

The statistical transient response of floating body SOI and bulk devices is measured under
proton and heavy ion irradiation. The influence of the device architecture is analyzed in …

We have measured the single-event-transient (SET) width as a function of cross-section over
three CMOS bulk/epitaxial technology nodes (0.25, 0.18 and 0.13 mum) using an identically …

Covering state-of-the-art advances, novel applications, and future perspectives, this volume
presents new directions on the basic studies of charged particle and photon interactions with …