Silicon nanowire GAA-MOSFET: A workhorse in nanotechnology for future semiconductor devices
In today's world, semiconductor nanowire GAA-MOSFET devices have stimulated a lot of
scientific research interest in the field of semiconductor. It has been observed as one of the …
scientific research interest in the field of semiconductor. It has been observed as one of the …
Nanowire array-based MOSFET for future CMOS technology to attain the ultimate scaling limit
Silicon nanowire (SiNW) structures are the essential foundations of the next generation
highly efficient and lowcost electronic devices because of their specific chemical, optical …
highly efficient and lowcost electronic devices because of their specific chemical, optical …
Analysis of barrier layer thickness on performance of In1–x Ga x as based gate stack cylindrical gate nanowire MOSFET
In this paper, InGaAs/InP heterostructure based Cylindrical Gate Nanowire MOSFETs
(CGNWMOSFET) is designed and its performance has been analyzed using silvaco ATLAS …
(CGNWMOSFET) is designed and its performance has been analyzed using silvaco ATLAS …
Improved switching speed of a CMOS inverter using work-function modulation engineering
This paper presents a detailed numerical analysis of work-function modulated cylindrical
gate metal-oxide-semiconductor field-effect transistor (MOSFET)-based CMOS inverter …
gate metal-oxide-semiconductor field-effect transistor (MOSFET)-based CMOS inverter …
A compact model of gate capacitance in ballistic gate-all-around carbon nanotube field effect transistors
This paper presents a one-dimensional analytical model for calculating gate capacitance in
Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic …
Gate-All-Around Carbon Nanotube Field Effect Transistor (GAA-CNFET) using electrostatic …
Inner-gate-engineered GAA MOSFET to enhance the electrostatic integrity
Gate-all-around (GAA) MOSFETs are the best multi-gate MOSFET structure due to their
strong electrostatic control over the channel. The electrostatic controllability can be …
strong electrostatic control over the channel. The electrostatic controllability can be …
Cryogenic analysis of junctionless nanowire MOSFET during underlap in lower technology nodes
TS Sasank, PR Ganesh, NP Kumar… - Journal of Physics …, 2021 - iopscience.iop.org
This paper presents a cryogenic analysis of Junction less Under lapped Nanowire
MOSFETs in lower technology nodes. The temperature dependent analysis is carried out to …
MOSFETs in lower technology nodes. The temperature dependent analysis is carried out to …
Dual material gate engineering to reduce DIBL in cylindrical gate all around Si nanowire MOSFET for 7-nm gate length
In this work, drain current ID for 7-nm gate length dual-material (DM) cylindrical gate all
around (CGAA) silicon nanowire (SiNW) has been studied and simulation results are …
around (CGAA) silicon nanowire (SiNW) has been studied and simulation results are …
[HTML][HTML] Triple and quadruple metal gate work function engineering to improve the performance of junctionless double surrounding gate In0. 53Ga0. 47As nanotube …
V Kumar, A Vohra - Physics Letters A, 2024 - Elsevier
In line with Moore's Law and the International Roadmap for Devices and Systems (IDRS),
shrinking MOSFET dimensions to the 3 nm technology node requires the introduction and …
shrinking MOSFET dimensions to the 3 nm technology node requires the introduction and …
Conical surrounding gate MOSFET: a possibility in gate-all-around family
In this paper a new conical surrounding gate metal-oxide-semiconductor field effect
transistor (MOSFET) with triple-material gate has been proposed and verified using TCAD …
transistor (MOSFET) with triple-material gate has been proposed and verified using TCAD …