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Power-up SRAM state as an identifying fingerprint and source of true random numbers
Intermittently powered applications create a need for low-cost security and privacy in
potentially hostile environments, supported by primitives including identification and random …
potentially hostile environments, supported by primitives including identification and random …
Ultralow-voltage process-variation-tolerant Schmitt-trigger-based SRAM design
We analyze Schmitt-Trigger (ST)-based differential-sensing static random access memory
(SRAM) bitcells for ultralow-voltage operation. The ST-based SRAM bitcells address the …
(SRAM) bitcells for ultralow-voltage operation. The ST-based SRAM bitcells address the …
[كتاب][B] Design for manufacturability and statistical design: a constructive approach
M Orshansky, S Nassif, D Boning - 2007 - books.google.com
Design for Manufacturability and Statistical Design: A Constructive Approach provides a
thorough treatment of the causes of variability, methods for statistical data characterization …
thorough treatment of the causes of variability, methods for statistical data characterization …
[كتاب][B] Robust SRAM designs and analysis
J Singh, SP Mohanty, DK Pradhan - 2012 - books.google.com
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and
analysis to meet the nano-regime challenges for CMOS devices and emerging devices …
analysis to meet the nano-regime challenges for CMOS devices and emerging devices …
Parameter variation tolerance and error resiliency: New design paradigm for the nanoscale era
Variations in process parameters affect the operation of integrated circuits (ICs) and pose a
significant threat to the continued scaling of transistor dimensions. Such parameter …
significant threat to the continued scaling of transistor dimensions. Such parameter …
Analyzing static and dynamic write margin for nanometer SRAMs
This paper analyzes write ability for SRAM cells in deeply scaled technologies, focusing on
the relationship between static and dynamic write margin metrics. Reliability has become a …
the relationship between static and dynamic write margin metrics. Reliability has become a …
A lightweight FPGA compatible weak-PUF primitive based on XOR gates
In this brief we introduce a novel lightweight FPGA compatible Physical Unclonable Function
(PUF) primitive based on XOR gates. The proposed XOR-PUF is the most compact FPGA …
(PUF) primitive based on XOR gates. The proposed XOR-PUF is the most compact FPGA …
A 0.5-V hybrid SRAM physically unclonable function using hot carrier injection burn-in for stability reinforcement
This article introduces an SRAM-based physically unclonable function (PUF) that employs
hybrid-mode operations in the enhancement-enhancement (EE) SRAM mode and CMOS …
hybrid-mode operations in the enhancement-enhancement (EE) SRAM mode and CMOS …
Breaking the simulation barrier: SRAM evaluation through norm minimization
With process variation becoming a growing concern in deep submicron technologies, the
ability to efficiently obtain an accurate estimate of failure probability of SRAM components is …
ability to efficiently obtain an accurate estimate of failure probability of SRAM components is …
The impact of random device variation on SRAM cell stability in sub-90-nm CMOS technologies
The impact of process variation on SRAM yield has become a serious concern in scaled
technologies. In this paper, we propose a methodology to analyze the stability of an SRAM …
technologies. In this paper, we propose a methodology to analyze the stability of an SRAM …