The thermoelectric properties of graphene and graphene nanostructures have recently
attracted significant attention from the physics and engineering communities. In fundamental …

The research field on tunnel-FETs (TFETs) has been rapidly develo** in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …

Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum
disulfide (MoS 2), are witnessing an explosion in research activities due to their apparent …

Particular strain geometry in graphene could lead to a uniform pseudomagnetic field of order
10 T and might open up interesting applications in graphene nanoelectronics. Through …

Strongly enhanced thermoelectric properties are predicted for graphene nanoribbons
(GNRs) with optimized pattern. By means of nonequilibrium Green's function atomistic …

We discuss recent progress regarding size effects and their incidence upon the coefficients
describing charge transport (resistivity, magnetoresistance, and Hall effect) induced by …

Two-dimensional material-based transistors are being extensively investigated for CMOS
(complementary metal oxide semiconductor) technology extension; nevertheless …

Heat transfer across metal-semiconductor interfaces involves multiple fundamental transport
mechanisms such as elastic and inelastic phonon scattering, and electron-phonon coupling …

The coherent quantum effect has become increasingly important in the heat dissipation
bottleneck of semiconductor nanoelectronics with the characteristic size recently shrinking …

The subthreshold leakage current in transistors has become a critical limiting factor for
realizing ultralow-power transistors. The leakage current is predominantly dictated by the …