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Silicon-based photonic integration beyond the telecommunication wavelength range
In this paper we discuss silicon-based photonic integrated circuit technology for applications
beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on …
beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on …
Novel InP-and GaSb-based light sources for the near to far infrared
This topical review presents an overview on novel concepts for light emitting diodes (LEDs)
and lasers for the near infrared to the THz regime. GaSb-based quantum well lasers are …
and lasers for the near infrared to the THz regime. GaSb-based quantum well lasers are …
[HTML][HTML] Room-temperature mid-infrared interband cascade vertical-cavity surface-emitting lasers
We report interband cascade vertical-cavity surface-emitting lasers (ICVCSELs) that operate
in pulsed mode at temperatures up to 70 C. Their emission at λ≈ 3.4 μm extends …
in pulsed mode at temperatures up to 70 C. Their emission at λ≈ 3.4 μm extends …
GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3<? show= 1x (16)?> μm
GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a
buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss …
buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss …
2.4 µm InP-based antimony-free triangular quantum well lasers in continuous-wave operation above room temperature
In this work, we report on the above-room-temperature continuous-wave operation of InP-
based antimony-free triangular quantum well (QW) lasers emitting up to approximately 2.4 …
based antimony-free triangular quantum well (QW) lasers emitting up to approximately 2.4 …
InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer
This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers.
This record long wavelength lasing is achieved by applying InP-based Sb-free structures …
This record long wavelength lasing is achieved by applying InP-based Sb-free structures …
3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth
We demonstrate an interband cascade resonant cavity light emitting diode (IC-RCLED)
operating near 3.3 µm at room temperature. The device is composed of a Sb-based type-II …
operating near 3.3 µm at room temperature. The device is composed of a Sb-based type-II …
Widely tunable III–V/silicon lasers for spectroscopy in the short-wave infrared
Integrating III-V gain material with silicon photonic integrated circuits enables the realization
of advanced laser sources and full integrated systems for optical communication and …
of advanced laser sources and full integrated systems for optical communication and …
Single mode GaSb diode lasers for sensor applications in a long wavelength regime
T Milde, C Assmann, A Jimenez, M Honsberg… - Applied Optics, 2017 - opg.optica.org
The wavelength, λ, range of 1.8 μm≤ λ≤ 3.5 μm contains strong spectral absorption lines of
many gases used in health, industry, safety, and medicine and whose sensitive and …
many gases used in health, industry, safety, and medicine and whose sensitive and …
Mid-IR GaSb-based bipolar cascade VCSELs
We design, fabricate, and study GaSb-based bipolar cascade vertical-cavity surface emitting
lasers (VCSELs) for laser emission of around 2.3 μm. An electrically coupled two-stage …
lasers (VCSELs) for laser emission of around 2.3 μm. An electrically coupled two-stage …