Photogating in low dimensional photodetectors

H Fang, W Hu - Advanced science, 2017 - Wiley Online Library
Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth
have attracted increasing research interests for electronic and optoelectronic devices in …

A review on organic–inorganic halide perovskite photodetectors: device engineering and fundamental physics

M Ahmadi, T Wu, B Hu - Advanced Materials, 2017 - Wiley Online Library
Abstract The last eight years (2009–2017) have seen an explosive growth of interest in
organic–inorganic halide perovskites in the research communities of photovoltaics and light …

High-performance perovskite-graphene hybrid photodetector.

Y Lee, J Kwon, E Hwang, CH Ra, WJ Yoo… - … (Deerfield Beach, Fla …, 2014 - europepmc.org
A high-performance novel photodetector is demonstrated, which consists of graphene and
CH3 NH3 PbI3 perovskite layers. The resulting hybrid photodetector exhibits a dramatically …

Origin of low carrier mobilities in halide perovskites

S Poncé, M Schlipf, F Giustino - ACS Energy Letters, 2019 - ACS Publications
Halide perovskites constitute a new class of semiconductors that hold promise for low-cost
solar cells and optoelectronics. One key property of these materials is the electron mobility …

[PDF][PDF] Fast and sensitive solution-processed visible-blind perovskite UV photodetectors

V Adinolfi, O Ouellette, MI Saidaminov, G Walters… - Adv. Mater, 2016 - light.utoronto.ca
We hypothesized that MAPbCl3 single crystals could overcome the limits exhibited by thin
films and that a substrateintegrated approach could enable efficient devices through better …

Microstructured silicon photodetector

Z Huang, JE Carey, M Liu, X Guo, E Mazur… - Applied Physics …, 2006 - pubs.aip.org
Photodetectors fabricated on microstructured silicon are reported. The photodetectors
exhibited high photoresponse; at 3 V bias, the responsivities were 92 A∕ W at 850 nm and …

III nitrides and UV detection

E Munoz, E Monroy, JL Pau, F Calle… - Journal of Physics …, 2001 - iopscience.iop.org
III nitrides and UV detection Page 1 Journal of Physics: Condensed Matter III nitrides and UV
detection To cite this article: E Muñoz et al 2001 J. Phys.: Condens. Matter 13 7115 View the …

Enlightening gallium nitride-based UV photodetectors

N Aggarwal, G Gupta - Journal of Materials Chemistry C, 2020 - pubs.rsc.org
This article highlights the emerging demand for gallium nitride (GaN) semiconductor
technology that offers superior optoelectronic properties making it suitable for highly efficient …

High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

L Liu, C Yang, A Patanè, Z Yu, F Yan, K Wang, H Lu… - Nanoscale, 2017 - pubs.rsc.org
Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great
demand for several technologies, but require the development of novel device structures …

Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3 Deep-Ultraviolet Photodetector

Z Liu, L Du, SH Zhang, L Li, ZY **… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, a metal–semiconductor–metal (MSM)-gallium oxide (Ga2O3) photodetector
(PD) was constructed by microprocessing techniques, including UV photolithography, liftoff …