Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

We discuss the challenges of light‐emitting diodes in view of their application to solid‐state
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …

Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …

The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …

The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with
large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier …

This chapter provides a brief introduction to group III-nitride ultraviolet light emitting diode
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …

Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually
addressable 10× 10 micro-pixelated LED (μLED) arrays with pixel diameters of 45 μm and …

We proposed a method to determine the internal quantum efficiency (IQE) of GaInN-based
light-emitting diode (LED). For the accurate determination thereof, we carefully reviewed a …

LED automotive lamps have become the mainstream automotive lighting equipment due to
their own characteristics of energy conservation and environmental protection. However, at …

InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice
(SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical …