Materials for high-temperature digital electronics
Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …
technology, have changed nearly all aspects of human life from communication to …
Reliability of NAND flash memories: Planar cells and emerging issues in 3D devices
AS Spinelli, C Monzio Compagnoni, AL Lacaita - Computers, 2017 - mdpi.com
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability
and discuss how the recent move to three-dimensional (3D) devices has affected this field …
and discuss how the recent move to three-dimensional (3D) devices has affected this field …
IOCost: block IO control for containers in datacenters
T Heo, D Schatzberg, A Newell, S Liu… - Proceedings of the 27th …, 2022 - dl.acm.org
Resource isolation is a fundamental requirement in datacenter environments. However, our
production experience in Meta's large-scale datacenters shows that existing IO control …
production experience in Meta's large-scale datacenters shows that existing IO control …
Curing of aged gate dielectric by the self-heating effect in MOSFETs
Gate dielectric damage caused by both internal and external stresses is becoming worse
because of aggressive complementary metal–oxide–semiconductor (CMOS) scaling …
because of aggressive complementary metal–oxide–semiconductor (CMOS) scaling …
Rethink the design of flash translation layers in a component-based view
CH Wu, DY Wu, HM Chou, CA Cheng - IEEE Access, 2017 - ieeexplore.ieee.org
NAND flash memory is a popular memory device that has many advantages such as high-
density, lightweight, shock-resistance, non-volatile, and low-power features. Although NAND …
density, lightweight, shock-resistance, non-volatile, and low-power features. Although NAND …
ApproxFTL: On the performance and lifetime improvement of 3-D NAND flash-based SSDs
3-D NAND flash is one of the most prospective advances in flash memory industry. While 3-
D flash improves cell density and reduces lithography cost through die stacking, it suffers …
D flash improves cell density and reduces lithography cost through die stacking, it suffers …
P-Alloc: Process-variation tolerant reliability management for 3D charge-trap** flash memory
Y Wang, L Dong, R Mao - ACM Transactions on Embedded Computing …, 2017 - dl.acm.org
Three-dimensional (3D) flash memory is an emerging memory technology that enables a
number of improvements to conventional planar NAND flash memory, including larger …
number of improvements to conventional planar NAND flash memory, including larger …
NV-Dedup: High-performance inline deduplication for non-volatile memory
The byte-addressable non-volatile memory (NVM) is a promising medium for data storage.
NVM-oriented file systems have been designed to explore NVM's performance potential …
NVM-oriented file systems have been designed to explore NVM's performance potential …
DLV: Exploiting device level latency variations for performance improvement on flash memory storage systems
NAND flash has been widely adopted in storage systems due to its better read and write
performance and lower power consumption over traditional mechanical hard drives. To meet …
performance and lower power consumption over traditional mechanical hard drives. To meet …
A block-level log-block management scheme for MLC NAND flash memory storage systems
NAND flash memory is the major storage media for both mobile storage cards and
enterprise Solid-State Drives (SSDs). Log-block-based Flash Translation Layer (FTL) …
enterprise Solid-State Drives (SSDs). Log-block-based Flash Translation Layer (FTL) …