Ion implantation has become a versatile and powerful technique for synthesizing nanometer‐
scale clusters and crystals embedded in the near‐surface region of a variety of hosts in …

Nanotechnology is a culmination of many facets of scientific and technological
developments in the nanorealm, including nanofabrication, nanomachineries, quantum …

The discovery of direct bandgap semiconducting two-dimensional (2D) transition metal
dichalcogenides (TMDCs) has opened a new era in flexible optoelectronic devices. Critical …

The growing demand for instant and reliable communication means that photonic circuits
are increasingly finding applications in optical communications systems. One of the prime …

Strong room-temperature photoluminescence (PL) in the wavelength range 650–950 nm
has been observed in high temperature annealed (1000–1300° C) substoichiometric silicon …

Time resolved photoluminescence PL decays have been measured for Si nanocrystals
embedded in silicon dioxide. The nanocrystals were formed by implanting 40 keV Si ions …

Si nanoclusters embedded in SiO 2 have been produced by thermal annealing of SiO x films
prepared by plasma enhanced chemical vapor deposition. The structural properties of the …

An erbium-doped microlaser is demonstrated utilizing Si O 2 microdisk resonators on a
silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM's) …

The correlation between the structural (average size and density) and optoelectronic
properties band gap and photoluminescence (PL) of Si nanocrystals embedded in SiO2 is …

In this article the luminescence properties of Si nanocrystals nc formed by plasma enhanced
chemical vapor deposition and their interaction with Er ions introduced by ion implantation …