Micro optical sensors based on avalanching silicon light-emitting devices monolithically integrated on chips
Silicon avalanche light-emitting devices (Si Av LEDs) offer various possibilities for realizing
micro-and even nano-optical biosensors directly on chip. The light-emitting devices (LEDs) …
micro-and even nano-optical biosensors directly on chip. The light-emitting devices (LEDs) …
Silicon MOS optoelectronic micro‐nano structure based on reverse‐biased PN junction
K Xu - physica status solidi (a), 2019 - Wiley Online Library
Photon emission from Si p‐channel MOS field‐effect transistor (PMOSFET) having 6‐μm
effective gate length that is operated as a three‐terminal gate‐controlled light‐emitting diode …
effective gate length that is operated as a three‐terminal gate‐controlled light‐emitting diode …
A sub-wavelength Si LED integrated in a CMOS platform
A nanoscale on-chip light source with high intensity is desired for various applications in
integrated photonics systems. However, it is challenging to realize such an emitter using …
integrated photonics systems. However, it is challenging to realize such an emitter using …
Simultaneous spectral recovery and CMOS micro-LED holography with an untrained deep neural network
Lensless holography promises compact, low-cost optical apparatus designs with similar
performance to traditional imaging setups. Here, we propose the use of a silicon micro-LED …
performance to traditional imaging setups. Here, we propose the use of a silicon micro-LED …
Nanosecond pulsed CMOS LED for all-silicon time-of-flight ranging
Light detection and ranging (LIDAR) is a widely used technique for measuring distance. With
recent advancements in integrated photonics, there is a growing interest in miniaturizing …
recent advancements in integrated photonics, there is a growing interest in miniaturizing …
Higher intensity SiAvLEDs in an RF bipolar process through carrier energy and carrier momentum engineering
Carrier energy and momentum engineering design concepts have been utilized to realize
higher intensity, up to 200 nW. μm-2 in p+ nn+ silicon avalanche-based LEDs in a silicon …
higher intensity, up to 200 nW. μm-2 in p+ nn+ silicon avalanche-based LEDs in a silicon …
Silicon LEDs fabricated in standard VLSI technology as components for all silicon monolithic integrated optoelectronic systems
M Du Plessis, H Aharoni… - IEEE Journal of Selected …, 2003 - ieeexplore.ieee.org
It is shown that, by using conventional VLSI design rules and device processing, a variety of
two terminal and multiterminal integrated silicon light-emitting devices (Si-LEDs) can be …
two terminal and multiterminal integrated silicon light-emitting devices (Si-LEDs) can be …
Injection-avalanche-based n+ pn silicon complementary metal–oxide–semiconductor light-emitting device (450–750 nm) with 2-order-of-magnitude increase in light …
In this paper, we report on an increase in emission intensity of up to 10 nW/µm 2 that has
been realized with a new novel two junction, diagonal avalanche control, and minority …
been realized with a new novel two junction, diagonal avalanche control, and minority …
Analysis of electroluminescence spectra of silicon and gallium arsenide junctions in avalanche breakdown
M Lahbabi, A Ahaitouf, M Fliyou, E Abarkan… - Journal of Applied …, 2004 - pubs.aip.org
We present a generalized study of light emission from reverse biased p–n junctions under
avalanche breakdown conditions. A model is developed based on direct and indirect …
avalanche breakdown conditions. A model is developed based on direct and indirect …
Visible light emission by a reverse-biased integrated silicon diode
M Morschbach, M Oehme… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
In this paper, the paper discussed the emission of visible light by a monolithically integrated
silicon diode under reverse bias. The emission of light is achieved using a special defect …
silicon diode under reverse bias. The emission of light is achieved using a special defect …