Erbium doped materials are of great interest in thin film integrated optoelectronic technology,
due to their Er 3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er …

Rare-earth doped materials are of crucial importance to optoelectronics, and are widely
deployed in fibre amplifiers and solid-state lasers. This article summarises the present state …

Optical waveguide amplifiers based on polymer materials offer a low-cost alternative for
inorganic waveguide amplifiers. Due to the fact that their refractive index is similar to that of …

ABSTRACT Aluminum oxide (Al2O3) is an emerging material in integrated photonics. It
exhibits a very broad transparency window from the UV to the mid-IR, very low propagation …

We investigate the focusing of surface plasmon polaritons (SPPs) excited with 1.5 µm light in
a tapered Au waveguide on a planar dielectric substrate by experiments and simulations …

A 4 cm long Er‐doped Al2O3 spiral waveguide amplifier was fabricated on a Si substrate,
and integrated with wavelength division multiplexers within a total area of 15 mm2. When …

Three different broadband sensitization concepts for optically active erbium ions are
reviewed: 1) silicon nanocrystals, with absorption over the full visible spectrum, efficiently …

We report the realization and performance of a distributed feedback channel waveguide
laser in erbium-doped aluminum oxide on a standard thermally oxidized silicon substrate …

When pumped with a 1.48 m laser diode, Er-implanted Al2O3 ridge waveguides emit a
broad spectrum consisting of several distinct peaks having wavelengths ranging from the …

Thin-film integrated optics is becoming more and more important in optical-communications
technology. The fabrication of passive devices such as planar optical waveguides, splitters …