Highly linear receiver front-end adopting MOSFET transconductance linearization by multiple gated transistors
Highly linear receiver RF front-end adopting MOSFET transconductance linearization by
linearly superposing several common-source FET transistors in parallel (multiple gated …
linearly superposing several common-source FET transistors in parallel (multiple gated …
Second-order intermodulation mechanisms in CMOS downconverters
An in-depth analysis of the mechanisms responsible for second-order intermodulation
distortion in CMOS active downconverters is proposed in this paper. The achievable second …
distortion in CMOS active downconverters is proposed in this paper. The achievable second …
A CMOS passive mixer with low flicker noise for low-power direct-conversion receiver
S Zhou, MCF Chang - IEEE Journal of Solid-State Circuits, 2005 - ieeexplore.ieee.org
A CMOS passive mixer is designed to mitigate the critical flicker noise problem that is
frequently encountered in constituting direct-conversion receivers. With a unique single …
frequently encountered in constituting direct-conversion receivers. With a unique single …
Design and analysis of low flicker-noise CMOS mixers for direct-conversion receivers
J Park, CH Lee, BS Kim, J Laskar - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
This paper presents the design and analysis of low flicker-noise RF mixers in a 0.18-mum
CMOS process for C-band direct-conversion receivers. The low flicker-noise mixers are …
CMOS process for C-band direct-conversion receivers. The low flicker-noise mixers are …
A 4th-order active-G/sub m/-RC reconfigurable (UMTS/WLAN) filter
A fourth-order low-pass continuous-time filter for a UMTS/WLAN receiver of a reconfigurable
terminal is presented. The filter uses the cascade of two Active-G/sub m/-RC biquad cells. A …
terminal is presented. The filter uses the cascade of two Active-G/sub m/-RC biquad cells. A …
A 15 mW, 70 kHz 1/f corner direct conversion CMOS receiver
This paper describes a fully integrated low noise amplifier (LNA)+ mixer+ first filtering stage,
suitable for direct conversion receivers. Its key feature is a current driven passive mixer …
suitable for direct conversion receivers. Its key feature is a current driven passive mixer …
A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-μm CMOS
J Rogin, I Kouchev, G Brenna… - IEEE Journal of Solid …, 2003 - ieeexplore.ieee.org
A 2-GHz direct-conversion receiver for wide-band code division multiple access (WCDMA) is
presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth …
presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth …
CMOS RF amplifier and mixer circuits utilizing complementary characteristics of parallel combined NMOS and PMOS devices
Design and chip fabrication results for complementary RF circuit topologies that utilize the
complementary RF characteristics of both NMOS and PMOS field-effect-transistor devices …
complementary RF characteristics of both NMOS and PMOS field-effect-transistor devices …
A fully integrated 0.18-/spl mu/m CMOS direct conversion receiver front-end with on-chip LO for UMTS
F Gatta, D Manstretta, P Rossi… - IEEE Journal of Solid …, 2004 - ieeexplore.ieee.org
This paper presents a 0.18-/spl mu/m CMOS direct-conversion IC realized for the Universal
Mobile Telecommunication System (UMTS). The chip comprises a variable gain low-noise …
Mobile Telecommunication System (UMTS). The chip comprises a variable gain low-noise …
A 0.77 mW 2.4 GHz RF Front-End With 4.5 dBm In-Band IIP3 Through Inherent Filtering
This letter describes low-power design techniques that are demonstrated with a 2.4 GHz RF
front-end consuming 0.77 mW while having a-4.5 dBm in-band third-order intermodulation …
front-end consuming 0.77 mW while having a-4.5 dBm in-band third-order intermodulation …