Multinary metal chalcogenides with tetrahedral structures for second-order nonlinear optical, photocatalytic, and photovoltaic applications

MM Chen, HG Xue, SP Guo - Coordination Chemistry Reviews, 2018 - Elsevier
There are a large number of metal chalcogenides crystallized in the wurtzite or zinc blende-
derived structures, in which all of the anions or cations are fourfold-surrounded by their …

Discovery of high-performance thermoelectric chalcogenides through reliable high-throughput material screening

L **, S Pan, X Li, Y Xu, J Ni, X Sun, J Yang… - Journal of the …, 2018 - ACS Publications
High-throughput (HTP) material design is an emerging field and has been proved to be
powerful in the prediction of novel functional materials. In this work, an HTP effort has been …

Revealing optoelectronic and transport properties of potential perovskites Cs2PdX6 (X= Cl, Br): a probe from density functional theory (DFT)

KC Bhamu, A Soni, J Sahariya - Solar Energy, 2018 - Elsevier
Metal-halide perovskites are rapidly emerging crystalline materials that are reasonably
preferred as leading aspirant for applications in optoelectronic and thermoelectric devices …

Defect diamond-like tellurides as infrared nonlinear optical materials with giant second-harmonic generation tensor

M Sun, C Li, J Shi, MH Lee, J Yao - Materials Today Physics, 2023 - Elsevier
As promising candidate for mid-and far-infrared (MFIR) nonlinear optical (NLO) materials,
diamond-like (DL) chalcogenides have been extensively studied because of their …

First-principles study of electronic and optical properties of ternary compounds AuBX2 (X= S, Se, Te) and AuMTe2 (M= Al, In, Ga)

MS Yaseen, J Sun, H Fang, G Murtaza, DS Sholl - Solid State Sciences, 2021 - Elsevier
The structural, electronic and optical properties of AuBX 2 (X= S, Se, Te) and AuMTe 2 (M=
Al, Ga, In) crystals with a chalcopyrite structure were investigated using first principles …

Investigation of structural, electronic, mechanical, and thermoelectric properties of the defect chalcopyrite semiconductor ZnIn2Se4 from density functional theory

A Mohanty, A Priyambada, P Parida - Materialia, 2024 - Elsevier
In this study, the detailed structural, electronic, mechanical, and thermoelectric properties of
ZnIn 2 Se 4 defect chalcopyrite semiconductor are carried out using density functional theory …

First-principles study of phase transition, electronic, elastic and optical properties of defect chalcopyrite ZnGa2Te4 semiconductor under different pressures

R Mayengbam, SK Tripathy, G Palai, SS Dhar - Journal of Physics and …, 2018 - Elsevier
The generalized gradient approximation (GGA) within the framework of density functional
theory (DFT) has been used to investigate the phase transition, electronic, elastic and optical …

Effect of vacancies on structural, electronic, elastic, and thermoelectric properties of CdIn2Se4 defect chalcopyrite-type semiconductor: An ab-initio approach

A Priyambada, A Mohanty, P Parida - Materials Today Communications, 2023 - Elsevier
In this work, we have investigated the detailed structural, electronic, elastic, mechanical and
thermoelectric properties of pure (CdInSe 2) and defect (CdIn 2 Se 4) chalcopyrite-type …

Ordered-vacancy defect chalcopyrite ZnIn2Te4: A potential thermoelectric material with low lattice thermal conductivity

P Govindaraj, K Murugan, P Veluswamy… - Journal of Solid State …, 2023 - Elsevier
An effective route towards commercializing thermoelectric devices is to explore materials
with high conversion efficiency. This study investigates the thermoelectric properties of ZnIn …

First principle investigations of structural, electronic, and optical properties of N‐ and Sn‐doped MgSiP2

K Khan, U Ahuja, A Soni… - International Journal of …, 2022 - Wiley Online Library
In this paper, we present the first principle investigations for structural and optoelectronic
properties of pure, n‐type, p‐type, and co‐doped MgSiP2 chalcopyrite compounds. To …