Exploration of the Stranski-Krastanow growth of strained semiconductor heterostructures
marked the major breakthrough for easy fabrication of defect-free quantum dots (QDs). For …

At present, metal–molecular tunnel junctions are recognized as important active elements in
molecular electronics. This gives a strong motivation to explore physical mechanisms …

We demonstrate the large potential of III–V compound semiconductors for a novel type of
Flash memory. The concept is based on self-organized III–V quantum dots (QDs). Here the …

A write time of 6ns for quantum dot–based memory structures | Applied Physics Letters | AIP
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We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–
Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross …

Many bottom-up and top-down techniques for nanomaterial and nanostructure generation
have enabled the development of applications in nanoelectronics and nanophotonics …

We present a theoretical study of the electronic and excitonic states in InAs/GaAsSb
quantum dots. We first center our study on the dependence of the antimony composition in …

The potential for GaSb nanostructures embedded in GaAs to operate as charge-based
memory elements at room temperature is introduced and explored. Cross-sectional …

The localization energies, capture cross sections, and storage times of holes in GaSb
quantum dots (QDs) are measured for three GaSb/GaAs QD ensembles with different QD …

We present structural, electrical, and theoretical investigations of self-assembled type-II
GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional …