The modification of surfaces by the deposition of a robust overlayer provides an excellent
handle with which to tune the properties of a bulk substrate to those of interest. Such control …

Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

Vertical geometry β-Ga 2 O 3 Schottky barrier diodes (SBDs) were fabricated and the
rectifying forward and reverse current-voltage characteristics were demonstrated at elevated …

Wide band gap (WGB) materials are the most promising semiconductors for future electronic
devices, and are candidates to replace the conventional materials (Si, GaAs,…) that are …

For the first time, the IVT dataset of a Schottky diode has been accurately modelled,
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …

This work presents the first alkyl monolayers covalently bound on HF-treated silicon carbide
surfaces (SiC) through thermal reaction with 1-alkenes. Treatment of SiC with diluted …

The current–voltage (I–V) characteristics of Al/methyl-red/Ag surface-type structure were
investigated in air at room temperature. The conventional forward bias I–V method, Cheung …

In this chapter, the most significant results obtained in the last decade in the field of ohmic
contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic …

We describe the formation of alkyl monolayers on silicon carbide (SiC) and silicon-rich
silicon nitride (Si x N4) surfaces, using UV irradiation in the presence of alkenes. Both the …

In this letter, high responsivity 4 H-Si C vertical Schottky UV photodiodes based on the pinch-
off surface effect, obtained by means of self-aligned Ni 2 Si interdigit contacts, are …