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Passively mode-locked femtosecond Ti:sapphire laser
A Bartels, D Heinecke, SA Diddams - Optics letters, 2008 - opg.optica.org
We report a mode-locked Ti: sapphire femtosecond laser emitting 42 fs pulses at a 10 GHz
repetition rate. When operated with a spectrally integrated average power greater than 1 W …
repetition rate. When operated with a spectrally integrated average power greater than 1 W …
Semiconductor saturable absorber mirror structures with low saturation fluence
We present two novel semiconductor saturable absorber mirror (SESAM) designs which can
exhibit more than ten times lower saturation fluence than classical SESAM devices. Design …
exhibit more than ten times lower saturation fluence than classical SESAM devices. Design …
2.1-W picosecond passively mode-locked external-cavity semiconductor laser
A Aschwanden, D Lorenser, HJ Unold, R Paschotta… - Optics letters, 2005 - opg.optica.org
We demonstrate an optically pumped passively mode-locked external-cavity semiconductor
laser generating 4.7-ps pulses at 957 nm with as much as 2.1 W of average output power …
laser generating 4.7-ps pulses at 957 nm with as much as 2.1 W of average output power …
11-GHz waveguide Nd: YAG laser CW mode-locked with single-layer graphene
We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped
waveguide Nd: YAG laser with a single-layer graphene saturable absorber. The depressed …
waveguide Nd: YAG laser with a single-layer graphene saturable absorber. The depressed …
GHz femtosecond processing with agile high-power laser: high power and flexible fs lasers in GHz burst mode open new horizons for femtosecond laser processing
E Audouard, G Bonamis, C Hönninger… - Advanced Optical …, 2021 - degruyter.com
Bursts of GHz repetition rate pulses can significantly improve the ablation efficiency of
femtosecond lasers. Depending on the process conditions, thermal mechanisms can be …
femtosecond lasers. Depending on the process conditions, thermal mechanisms can be …
Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range
We present the detailed growth and characterization of novel GaSb-based semiconductor
saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These …
saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These …
High peak power gigahertz Yb: CALGO laser
We present a high-power gigahertz SESAM modelocked Yb: CALGO laser with sub-60-fs
pulses. The laser delivers an average output power of 2.95 W at a pulse repetition rate of 1.8 …
pulses. The laser delivers an average output power of 2.95 W at a pulse repetition rate of 1.8 …
All-optical Q-switching limiter for high-power gigahertz modelocked diode-pumped solid-state lasers
A Klenner, U Keller - Optics Express, 2015 - opg.optica.org
Passively modelocked diode-pumped solid-state lasers (DPSSLs) with pulse repetition rates
in the gigahertz regime suffer from an increased tendency for Q-switching instabilities. Low …
in the gigahertz regime suffer from an increased tendency for Q-switching instabilities. Low …
Amplitude noise and timing jitter characterization of a high-power mode-locked integrated external-cavity surface emitting laser
We present a timing jitter and amplitude noise characterization of a high-power mode-locked
integrated external-cavity surface emitting laser (MIXSEL). In the MIXSEL, the semiconductor …
integrated external-cavity surface emitting laser (MIXSEL). In the MIXSEL, the semiconductor …