Recent advances in ambipolar transistors for functional applications

Y Ren, X Yang, L Zhou, JY Mao… - Advanced Functional …, 2019 - Wiley Online Library
Ambipolar transistors represent a class of transistors where positive (holes) and negative
(electrons) charge carriers both can transport concurrently within the semiconducting …

Nanomaterials for quantum information science and engineering

A Alfieri, SB Anantharaman, H Zhang… - Advanced …, 2023 - Wiley Online Library
Quantum information science and engineering (QISE)—which entails the use of quantum
mechanical states for information processing, communications, and sensing—and the area …

A CMOS silicon spin qubit

R Maurand, X Jehl, D Kotekar-Patil, A Corna… - Nature …, 2016 - nature.com
Silicon, the main constituent of microprocessor chips, is emerging as a promising material
for the realization of future quantum processors. Leveraging its well-established …

Embedded nano spin sensor for in situ probing of gas adsorption inside porous organic frameworks

J Zhang, L Liu, C Zheng, W Li, C Wang… - nature …, 2023 - nature.com
Spin-based sensors have attracted considerable attention owing to their high sensitivities.
Herein, we developed a metallofullerene-based nano spin sensor to probe gas adsorption …

Anomalous zero-bias conductance peak in a Nb–InSb nanowire–Nb hybrid device

MT Deng, CL Yu, GY Huang, M Larsson, P Caroff… - Nano …, 2012 - ACS Publications
Semiconductor InSb nanowires are expected to provide an excellent material platform for
the study of Majorana fermions in solid state systems. Here, we report on the realization of a …

A single-hole spin qubit

NW Hendrickx, WIL Lawrie, L Petit, A Sammak… - Nature …, 2020 - nature.com
Qubits based on quantum dots have excellent prospects for scalable quantum technology
due to their compatibility with standard semiconductor manufacturing. While early research …

Electronic Transport and Quantum Phenomena in Nanowires

G Badawy, EPAM Bakkers - Chemical Reviews, 2024 - ACS Publications
Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire

H Fang, W Hu, P Wang, N Guo, W Luo, D Zheng… - Nano …, 2016 - ACS Publications
One-dimensional InAs nanowires (NWs) have been widely researched in recent years.
Features of high mobility and narrow bandgap reveal its great potential of optoelectronic …

Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions

C Kloeffel, MJ Rančić, D Loss - Physical Review B, 2018 - APS
We study theoretically the low-energy hole states in Si, Ge, and Ge/Si core/shell nanowires
(NWs). The NW core in our model has a rectangular cross section, the results for a square …

Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

A Sarkar, Z Wang, M Rendell, NW Hendrickx… - Physical Review B, 2023 - APS
Hole spin qubits in group-IV semiconductors, especially Ge and Si, are actively investigated
as platforms for ultrafast electrical spin manipulation thanks to their strong spin-orbit …