Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si
(111) is presented. Ga droplets with different diameters (340–90nm) were deposited on the …
(111) is presented. Ga droplets with different diameters (340–90nm) were deposited on the …
Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
V Consonni, M Knelangen, L Geelhaar, A Trampert… - Physical Review B …, 2010 - APS
The formation mechanisms of epitaxial GaN nanowires grown within a self-induced
approach by molecular-beam epitaxy have been investigated at the onset of the nucleation …
approach by molecular-beam epitaxy have been investigated at the onset of the nucleation …
[HTML][HTML] Strain-driven quantum dot self-assembly by molecular beam epitaxy
Research into self-assembled semiconductor quantum dots (QDs) has helped advance
numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By …
numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By …
GaN in different dimensionalities: Properties, synthesis, and applications
Y Chen, J Liu, K Liu, J Si, Y Ding, L Li, T Lv… - Materials Science and …, 2019 - Elsevier
Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …
special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low …
AlGaN/AlN Stranski–Krastanov Quantum Dots for Highly Efficient Electron Beam-Pumped Emitters: The Role of Miniaturization and Composition to Attain Far UV-C …
Conventional ultraviolet lamps for disinfection emit radiation in the 255–270 nm range,
which poses a high risk of causing cancer and cataracts. To address these concerns, solid …
which poses a high risk of causing cancer and cataracts. To address these concerns, solid …
Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
O Landré, C Bougerol, H Renevier, B Daudin - Nanotechnology, 2009 - iopscience.iop.org
We have performed a real-time in situ x-ray scattering study of the nucleation of GaN
nanowires grown by plasma-assisted molecular beam epitaxy on AlN (0001)/Si (111). The …
nanowires grown by plasma-assisted molecular beam epitaxy on AlN (0001)/Si (111). The …
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes
(LEDs) at 308 nm were achieved using high density (2.5× 109 cm− 2) GaN/AlN quantum …
(LEDs) at 308 nm were achieved using high density (2.5× 109 cm− 2) GaN/AlN quantum …
Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
We report on the controlled growth by molecular beam epitaxy of 20-period Si-doped Ga
N∕ Al N quantum dot (QD) superlattices, in order to tailor their intraband absorption within …
N∕ Al N quantum dot (QD) superlattices, in order to tailor their intraband absorption within …