Evolution of tunnel field effect transistor for low power and high speed applications: a review
Various challenges arise in a continuous scaling of MOSFET like Short Channel Effects, as
the channel length shrinks, current is produced in OFF-state, which also results in high …
the channel length shrinks, current is produced in OFF-state, which also results in high …
Comparative analysis of nanowire tunnel field effect transistor for biosensor applications
Nanowire based devices are most important candidate for future generation application. The
unique advantage of Nanowire as a channel material is one dimensional conduction, low …
unique advantage of Nanowire as a channel material is one dimensional conduction, low …
Sensitivity and Non-Ideal Issues Analysis of a Dielectric Modulated Electrically Doped Junctionless TFET-Based Label-Free Biosensor
To reduce the fabrication complexity and cost of nanoscale biosensors, a novel electrically
doped concept is proposed for the first time, aiming to implement a dielectric-modulated …
doped concept is proposed for the first time, aiming to implement a dielectric-modulated …
MoS2 based Thickness Engineered Tunnel field-effect transistors for RF/analog applications
In this work, a novel 2D material-based Thickness Engineered Tunnel FET (MoS 2 TE-TFET)
has been proposed and investigated. The impact of channel layer thickness variation on …
has been proposed and investigated. The impact of channel layer thickness variation on …
[HTML][HTML] β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
This paper presents a new β-Ga 2 O 3 Junctionless double gate Metal-Oxide-Field-
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Energy band adjustment in a reliable novel charge plasma SiGe source TFET to intensify the BTBT rate
The energy band of a novel Si 0.7 Ge 0.3 source tunneling field-effect transistor (TFET) is
successfully adjusted and sharply bent without any physical formation of metallurgical …
successfully adjusted and sharply bent without any physical formation of metallurgical …
Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
In this study, we analyze a β-Ga2O3 gate-all-around nanowire junctionless transistor (β-GAA-
JLT) in accumulation mode. The performances are investigated by considering quantum …
JLT) in accumulation mode. The performances are investigated by considering quantum …
Parametric investigation and trap sensitivity of npn double gate TFETs
This article reports an architecture of a silicon-on-insulator (SOI) tunnel field effect transistor
(TFET) possessing an npn body, where the two pn junctions serve as the primary tunneling …
(TFET) possessing an npn body, where the two pn junctions serve as the primary tunneling …
Implementation of Low Power Inverter using Si1-xGex Pocket N & P-Channel Junction-Less Double Gate TFET
In this paper tunnel field effect transistor is reintroduced as an efficient low power
replacement of MOSFET. The main drawbacks of TFET devices, like low ON-state current …
replacement of MOSFET. The main drawbacks of TFET devices, like low ON-state current …
Frequency and temperature dependent electrical and dielectric properties of LaCrO3 and Ir doped LaCrO3 perovskite compounds
Perovskite oxide materials, especially perovskite lanthanum chromium oxide, LaCrO 3
(LCO) have taken considerable attention among the scientists due to the changing optical …
(LCO) have taken considerable attention among the scientists due to the changing optical …