Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Review of highly mismatched III-V heteroepitaxy growth on (001) silicon
Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …
Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
B Kunert, Y Mols, M Baryshniskova… - Semiconductor …, 2018 - iopscience.iop.org
The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …
of new device applications and functionalities which would benefit from both the excellent …
Device and circuit-level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications
This article investigates the performance of a vertically grown GaSb/Si tunnel field effect
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
Unraveling the role of surface and interfacial defects in hydrogen production to construct an all-in-one broken-gap photocatalyst
Broken-gap heterojunctions are rarely used as photocatalysts due to their non-overlap**
bandgap, which is a barrier to optimal charge carrier separation and higher photocatalytic …
bandgap, which is a barrier to optimal charge carrier separation and higher photocatalytic …
Performance investigation of GaSb/Si heterojunction based gate underlap and overlap vertical TFET biosensor
The present paper estimates the performance of vertically developed double gate GaSb/Si
tunnel field-effect transistor (V-DGTFET) biosensor with source pocket. A commercially …
tunnel field-effect transistor (V-DGTFET) biosensor with source pocket. A commercially …
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance
G Gopal, H Garg, H Agrawal… - … Science and Technology, 2022 - iopscience.iop.org
The device behavior of a stacked ferroelectric heterojunction tunnel field effect transistor (Fe-
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
Heterogeneous integration of III–V materials by direct wafer bonding for high-performance electronics and optoelectronics
III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …
electronics and optoelectronics owning to their high carrier mobilities and potential for …