(57) ABSTRACT A semiconductor device includes a substrate, a circuit layer formed on a
first surface of the substrate and including a via pad and an interlayer insulating layer …

A light receiving element according to an embodiment of the present disclosure includes a
plurality of pixels, a photo electric conversion layer common to the plurality of pixels, a first …

The present technology relates to an imaging apparatus and a manufacturing method which
enables sensitivity of an imaging apparatus using infrared rays to be improved. The imaging …

US9136443B2 - Display device and manufacturing method of the same - Google Patents
US9136443B2 - Display device and manufacturing method of the same - Google Patents …

(57) ABSTRACT A semiconductor device including a device substrate and a readout circuit
substrate. The device substrate includes a device region and a peripheral region. In the …

Providing a SPAD photodiode that accurately captures a subject regardless of long distance
or short distance. A solid-state imaging apparatus (1000) according to the pres ent …

US9817239B2 - Three-dimensional display device having lens-switching function - Google
Patents US9817239B2 - Three-dimensional display device having lens-switching function …

The inventive photoelectric conversion device includes a substrate, a lower electrode layer
provided on the substrate, a CIGS compound semiconductor layer provided on the lower …

A photoelectric conversion apparatus includes a first and a second multilayer wiring layer.
The first or the second multilayer wiring layer is provided with a first electrode supplied with …

(57) ABSTRACT A photodetecting device includes a semiconductor substrate, a plurality of
avalanche photodiodes each having a light receiving region, the avalanche photodiodes …