Quantum dot nanostructures and molecular beam epitaxy
In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …
nanoelectronic devices with new or largely improved performances; these devices are …
Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage
Photoluminescence spectroscopy is used to investigate the size distribution of InAs quantum
dots embedded in GaAs quantum wells as function of substrate temperature and InAs …
dots embedded in GaAs quantum wells as function of substrate temperature and InAs …
Evidence for 2D precursors and interdiffusion in the evolution of self-assembled CdSe quantum dots on ZnSe
The evolution of self-assembled CdSe quantum dots deposited on (and subsequently
capped by) ZnSe was investigated on a series of samples grown by molecular beam …
capped by) ZnSe was investigated on a series of samples grown by molecular beam …
Optical evidence of polaron interaction in InAs/GaAs quantum dots
Photoluminescence (PL) and resonant PL (RPL) have been performed at low temperatures
in a number of InAs/GaAs quantum dots (QD's) whose emission energies range from 1.4 to …
in a number of InAs/GaAs quantum dots (QD's) whose emission energies range from 1.4 to …
Carrier transfer in self-assembled coupled InAs/GaAs quantum dots
GG Tarasov, YI Mazur, ZY Zhuchenko… - Journal of Applied …, 2000 - pubs.aip.org
Photoluminescence PL spectra and time-resolved PL data from AlGaAs/GaAs superlattice
structures containing thin InAs layers of about 1–3 monolayer grown on semi-insulating 001 …
structures containing thin InAs layers of about 1–3 monolayer grown on semi-insulating 001 …
Hydrogenic impurity bound polaron in a cylindrical quantum dot in an electric field
The influence of electric field on the ground-state energy of a polaron, bound to a
hydrogenic impurity in a cylindrical quantum dot is investigated. The results illustrate the …
hydrogenic impurity in a cylindrical quantum dot is investigated. The results illustrate the …
Transient luminescence of dense InAs/GaAs quantum dot arrays
Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied
by means of steady state and time-resolved photoluminescence spanning a wide range of …
by means of steady state and time-resolved photoluminescence spanning a wide range of …
Change in topography of InAs submonolayer nanostructures at the 2D to 3D transition
A strong topographical evidence of the 2D to 3D transition in InAs/GaAs nanostructures
assembled by the submonolayer (SML) growth mode using molecular beam epitaxy (MBE) …
assembled by the submonolayer (SML) growth mode using molecular beam epitaxy (MBE) …
Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots
Time-resolved photoluminescence (PL) from InAs/GaAs quantum dots with a bimodal size
distribution is used to investigate the dynamic carrier-transfer processes which couple …
distribution is used to investigate the dynamic carrier-transfer processes which couple …
[HTML][HTML] Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation
InAs quantum dots (QDs) have been grown on a GaAs (001) substrate in the subcritical
region of InAs coverage for transition from a 2-dimensional (2D) to a 3-dimensional growth …
region of InAs coverage for transition from a 2-dimensional (2D) to a 3-dimensional growth …