In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …

Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …

This paper presents key features of MRAM-based non-volatile memory embedded into Intel
22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for …

The world's appetite for analyzing massive amounts of structured and unstructured data has
grown dramatically. The computational demands of these abundant-data applications, such …

Recent progress in the development of artificial intelligence technologies, aided by deep
learning algorithms, has led to an unprecedented revolution in neuromorphic circuits …

Resistive random access memories (RRAMs) using two-dimensional (2D) materials have
delivered comparable switching performance with CMOS devices. However, devices risk …

Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …

Binarized neural networks, a recently discovered class of neural networks with minimal
memory requirements and no reliance on multiplication, are a fantastic opportunity for the …

In-memory computing (IMC) aims at executing numerical operations via physical processes,
such as current summation and charge collection, thus accelerating common computing …