Abstract Novel quinternary Cu2Cd1− xMnxSnS4 (0≤ x≤ 1) semiconductor thin films were
deposited onto soda lime glass substrates at 300℃ by the spray pyrolysis technique to study …

In this work, we synthesis Cu 2 ZnSnS 4 (CZTS) thin films by sol–gel method associated to
dip-coating technique on the ordinary glass substrates. We investigated the effect of dip …

We report for the first time the effect of substrate temperature on the structural, optical, and
electrical properties of Cu 2 Cd 0.8 Mn 0.2 SnS 4 new photovoltaic absorber layer. Cu 2 Cd …

In this article, we report the growth of Cu2ZnSnS4 (CZTS) films using a pulsed-laser
deposition technique, to use as a counter electrode (CE) for dye-sensitized solar cells …

In this work, the preparation of “Ag” alloying Cu2ZnSnSe4 films using a two‐step process,
comprising vacuum evaporated ([Sn/ZnSe/Ag/Sn/ZnSe/Cu]× 2) precursor layer deposition …

In order to prepare thin films of novel semiconductor materials that contain only earth
abundant, low cost and nontoxic elements, Cu 2 Zn x Fe 1-x SnS 4 ingots were successfully …

While single target sputter deposition appears very attractive to prepare kesterite Cu 2
ZnSnS 4 (CZTS) thin films for photovoltaic applications, the growth of secondary phases …

In the current work, the results of the in situ Raman monitoring of phase formation of copper
zinc tin sulfide (Cu 2 ZnSnS 4, CZTS) material from room temperature up to 350° C are …

In this work, the CZTS absorbers were prepared by sol-gel method and the combination of
electrodeposition and sol-gel method. The influence of Na and/or K incorporation on the …

This paper presents the optimal configuration of parameters for the elaborated Cu 2 ZnSnS
4 (CZTS) absorber layer, using the sol–gel method associated with dip-coating technique on …