Changes in intestinal microbiota and humoral immune response following probiotic administration in brown trout (Salmo trutta)

JL Balcázar, I De Blas, I Ruiz-Zarzuela… - British journal of …, 2007 - cambridge.org
We studied the effect of several lactic acid bacteria (LAB) on the humoral response of brown
trout (Salmo trutta). LAB groups (Lactococcus (Lc.) lactis ssp. lactis, Lactobacillus (Lb.) sakei …

Numerical investigation on the carrier transport characteristics of AlGaN deep-UV light-emitting diodes

YK Kuo, JY Chang, FM Chen, YH Shih… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes
(LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection …

Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes

YK Kuo, MC Tsai, SH Yen, TC Hsu… - IEEE Journal of …, 2010 - ieeexplore.ieee.org
P-type do** in the last barrier is proposed to improve the efficiency droop of the blue
InGaN light-emitting diodes (LEDs). The light-current curves, energy band diagrams, carrier …

Nonlinear properties of tapered laser cavities

S Sujecki, L Borruel, J Wykes, P Moreno… - IEEE Journal of …, 2003 - ieeexplore.ieee.org
The nonlinear phenomena accompanying the process of light generation in high-power
tapered semiconductor lasers are studied using a combination of simulation and …

Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes

JR Chen, YC Wu, SC Ling, TS Ko, TC Lu, HC Kuo… - Applied Physics B, 2010 - Springer
The physical mechanisms leading to the efficiency droop of InGaN/GaN light-emitting diodes
(LEDs) are theoretically investigated. We first discuss the effect of Auger recombination loss …

Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layers

JR Chen, CH Lee, TS Ko, YA Chang, TC Lu… - Journal of Lightwave …, 2008 - opg.optica.org
Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a
ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been …

71% wall-plug efficiency from 780 nm-emitting laser diode with GaAsP quantum well

B Wang, L Zhou, S Tan, W Liu, G Deng… - Optics & Laser …, 2024 - Elsevier
High-efficiency laser diodes often adopt high mirror loss design to improve the external
differential efficiency of the device. However, the significantly elevated threshold carrier …

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

JR Chen, SC Ling, HM Huang, PY Su, TS Ko, TC Lu… - Applied Physics B, 2009 - Springer
The optical properties of InGaN multi-quantum-well laser diodes with different polarization-
matched AlInGaN barrier layers have been investigated numerically by employing an …

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

ZH Zhang, W Liu, ST Tan, Z Ju, Y Ji, Z Kyaw… - Optics …, 2014 - opg.optica.org
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN
electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells …

Density and temperature dependence of carrier dynamics in self-organized InGaAs quantum dots

TB Norris, K Kim, J Urayama, ZK Wu… - Journal of Physics D …, 2005 - iopscience.iop.org
We have used two-and three-pulse femtosecond differential transmission spectroscopy to
study the dependence of quantum dot carrier dynamics on temperature. At low temperatures …