Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received
great attention due to its unique properties. Because of low cost, absence of toxicity, and …

Abstract Zinc (Zn) doped/substituted Tin (II) sulfide (SnS) is one of the most important
semiconductors for optoelectronic, photocatalytic, and gas-sensing applications. Herein, an …

Colloidal semiconducting nanocrystals have been identified as a set of promising and
versatile nanostructured building blocks for numerous applications owing to their many …

SnS thin films with different thicknesses have been deposited on glass substrates at a
substrate temperature of 300° C. The influence of thickness on structural, morphological …

New types of thin film solar cells made from earth-abundant, non-toxic materials and with
adequate physical properties such as band-gap energy, large absorption coefficient and p …

Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor
layers in a closed chamber. The effect of sulphurization temperature (T s) that varied in the …

In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have
been considered as the most efficient absorber materials due to their direct energy band gap …

Tin sulfide (SnS) is a material of interest for use as an absorber in low cost solar cells. Single
crystals of SnS were grown by the physical vapor deposition technique. The grown crystals …

Thin films of tin sulfide (SnS) were grown on a glass substrate at an optimum temperature of
300° C by thermal evaporation technique. Following the deposition, films were vacuum …

In this study, the effect of controlled conditions on the optical properties of tin monosulfide
(SnS) thin films was successfully investigated by the chemistry spray pyrolysis deposition …