We present a comprehensive review of the material properties of cadmium zinc telluride
(CZT, Cd1− xZnxTe) with zinc content x= 0.1–0.2. Particular emphasis is placed on those …

Compound semiconductor alloys such as In x Ga 1− x As, GaAs x P 1− x, or CuIn x Ga 1− x
Se 2 are increasingly employed in numerous electronic, optoelectronic, and photonic …

InGaN quantum dots were grown by metal-organic vapor phase epitaxy using a phase-
separation process based on spinodal and binodal decomposition. Uncapped structures …

Solution hardening due to the incorporation of Zn in CdTe is studied theoretically by means
of a model which starts from the differences between the Cd-Te and Zn-Te bond lengths …

The properties of the cation vacancy and the Te antisite, two dominant defects in CdTe and
Cd 1− x Zn x Te alloys grown in Te-rich conditions, are examined using first-principles …

In order to bridge experimental results for the atomic structure in mixed crystals between x-
ray diffraction showing a Vegard's law and x-ray absorption fine structure spectroscopy …

To clarify lattice distortions induced by adding Ga atoms in the InSb crystal, Ga K α x-ray
fluorescence holography (XFH) experiments were carried out on an In 0.995 Ga 0.005 Sb …

Five ZnxCd1− xTe solid solutions with x= 0.1, 0.3, 0.5, 0.7 and 0.9 at.% were synthesized by
fusing stoichiometric amounts of Zn, Cd and Te constituents in silica tubes. Each …

The thermodynamic coherent analysis of all data in Zn-Cd-Te, Zn-Hg-Te and Ce-Hg-Te
ternaries, combined with that in the corresponding binaries, is understood by using a …

Electronic absorption spectroscopy has been used to study changes in Co2+ ligand-field
parameters as a function of alloy composition in Co2+-doped Cd1-x Zn x Se nanocrystals. A …