Abstract The Kinetic Monte Carlo (KMC) algorithm is a particularly apt technique to simulate
the complex processing of semiconductor devices. In this review, some of the main …

Extended defects are often found after ion implantation and annealing of silicon and they are
known to affect dopant diffusion. The article reviews the structure and energetics of the most …

A physically motivated model that accounts for the spatial and temporal evolution of self-
interstitial agglomerates in ion-implanted Si is presented. For the calibration of the model, a …

Annealing of ion-implanted Si leads to the formation of various extrinsic defects which affect
dopant diffusion. In this paper, we describe the mechanisms by which, small clusters evolve …

Fission times of uraniumlike nuclei with excitation energies up to about 250 MeV have been
inferred from blocking effects in a single crystal. They are found longer by at least 1 order of …

The diffusion of indium in silicon has been investigated in the temperature range of 800 to
1000° C by using secondary ion mass spectroscopy and transmission electron microscopy …

Semiconductor-grade silicon is one of the most perfect crystalline materials that can be
fabricated. It contains less than 1 ppb of unintended impurities and negligible twins or …

Recent experimental work has demonstrated the existence of band bending at the Si–SiO 2
interface after ion implantation. The present work employs FLOOPS-based numerical …

We have formed Si x Ge 1− x− y Sn y compounds on Si substrates by ion implantation and
annealing and investigated their concentration profiles, crystallization, and optical …

In the light of recent theoretical calculations predicting the mobile silicon di-interstitial (I 2)
we have carried out a thorough analysis of its implications within a self-consistent …