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Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review
Abstract Transistor-based on Gallium Nitride (GaN) technology, has enabled energy-saving
power electronics to alleviate global energy utilization. Being the initial stages of the …
power electronics to alleviate global energy utilization. Being the initial stages of the …
On the Origin of the -Losses in Soft-Switching GaN-on-Si Power HEMTs
M Guacci, M Heller, D Neumayr, D Bortis… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
The unprecedented performance potential of gallium nitride-on-silicon (GaN-on-Si) high
electron mobility transistors (HEMTs) is seen as the key enabler for the design of power …
electron mobility transistors (HEMTs) is seen as the key enabler for the design of power …
Electron trap** in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers
This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on
epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used …
epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used …
Effect of carbon do** on charging/discharging dynamics and leakage behavior of carbon-doped GaN
Capacitance transient spectroscopy and dc current-voltage (IV) characterization are
employed to analyze charging/discharging effects and transport in 200-nm-thin carbon …
employed to analyze charging/discharging effects and transport in 200-nm-thin carbon …
[HTML][HTML] Leakage mechanisms in GaN-on-GaN vertical pn diodes
Reverse bias leakage in bulk GaN-on-GaN pn diodes has been studied as a function of
time. A peak was observed in the current transient and attributed to impurity band …
time. A peak was observed in the current transient and attributed to impurity band …
Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination
Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs)
determine the semi-insulating behavior of carbon-doped GaN (GaN: C) layers and are still …
determine the semi-insulating behavior of carbon-doped GaN (GaN: C) layers and are still …
“Kink” in AlGaN/GaN-HEMTs: floating buffer model
M Singh, MJ Uren, T Martin, S Karboyan… - … on Electron Devices, 2018 - ieeexplore.ieee.org
We report on a floating buffer model to explain “kink,” a hysteresis in the output
characteristics of Fe-doped AlGaN/GaN HEMTs observed at low drain bias. Unintentionally …
characteristics of Fe-doped AlGaN/GaN HEMTs observed at low drain bias. Unintentionally …
Determination of the self-compensation ratio of carbon in AlGaN for HEMTs
B Rackauskas, MJ Uren, S Stoffels… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Epitaxial AlGaN/GaN/AlGaN-on-Si high-electron mobility structures with and without carbon
do** have been studied. By considering the donor density required to suppress a 2D hole …
do** have been studied. By considering the donor density required to suppress a 2D hole …
High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors
W Wang, Z Yang, Z Lu, G Li - Journal of Materials Chemistry C, 2018 - pubs.rsc.org
The nonpolar a-plane and m-plane of GaN are anisotropic due to the fact that in-plane
stresses of nonpolar GaN along different directions are varied, which is considered to be the …
stresses of nonpolar GaN along different directions are varied, which is considered to be the …
Analytically modeling the effect of buffer charge on the 2DEG density in AlGaN/GaN HEMT
In this article, an analytical model of the buffer charge (BC) effect is presented for the 2-D
electron-gas (2DEG) density (prediction in AlGaN/GaN high-electron-mobility-transistor …
electron-gas (2DEG) density (prediction in AlGaN/GaN high-electron-mobility-transistor …