This paper proposes a synthesis of different electrical methods used to estimate the
temperature of power semiconductor devices. The following measurement methods are …

There are numerous methods for measuring the temperature of an operating semiconductor
device. The methods can be broadly placed into three generic categories: electrical, optical …

The measurement of the junction temperature with thermosensitive electrical parameters
(TSEPs) is largely used by electrical engineers or researchers, but the obtained temperature …

Page 1 THE INSULATED GATE BIPOLAR TRANSISTOR IGBT THEORY AND DESIGN Vinod
Kumar Khanna IEEE IEEE PRESS WILEYINTERSCIENCE A JOHN WILEY & SONS, INC …

In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are
reviewed, analyzed, compared and classified into different categories according to …

In many power converter applications, particularly those with high variable loads, such as
traction and wind power, condition monitoring of the power semiconductor devices in the …

Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to
estimate the device temperature in operation, typically assuming a constant thermal …

Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …

Power electronics converters (PECs) are responsible for efficiently converting electrical
energy between power generators, storage systems and power consumers/loads. The PECs …

A resistance-capacitance (RC) thermal network with temperature-dependent thermal
conductivities and heat capacitances is used to calculate the junction temperature of …